W-band capacitively loaded slow-wave transmission line phase shifter in 130nm CMOS

Johannes J.P. Venter, Tinus Stander

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Citations (Scopus)


We present a novel full-band W-band capacitively loaded transmission line phase shifter. A classical slow-wave microstrip (S-MS) transmission line is loaded with tunable FET capacitors to enable continuous phase tuning. The design is implemented in GlobalFoundries US 8HP 130 nm SiGe BiCMOS process with the 7 metal layer option. A maximum phase shift of 95.59° is achieved with an insertion loss of -5 dB ± 1.5 dB across the band, yielding a FoM of 17.3. The design occupies a chip area of 0.67 mm2. This solid-state solution presents a suitable alternative to micro-electromechanical systems (MEMS) loaded line phase shifters without the need for high tuning voltages.

Original languageEnglish
Title of host publication2017 IEEE AFRICON
Subtitle of host publicationScience, Technology and Innovation for Africa, AFRICON 2017
EditorsDarryn R. Cornish
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781538627754
Publication statusPublished - 3 Nov 2017
Externally publishedYes
EventIEEE AFRICON 2017 - Cape Town, South Africa
Duration: 18 Sept 201720 Sept 2017

Publication series

Name2017 IEEE AFRICON: Science, Technology and Innovation for Africa, AFRICON 2017


ConferenceIEEE AFRICON 2017
Country/TerritorySouth Africa
CityCape Town


  • MMICs
  • MOS devices
  • Phase Shifters
  • Phased Arrays

ASJC Scopus subject areas

  • Human-Computer Interaction
  • Signal Processing
  • Computer Vision and Pattern Recognition
  • Artificial Intelligence
  • Computer Networks and Communications
  • Computer Science Applications


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