@inproceedings{6f79942ba093414bb4edc95d117d81c5,
title = "W-band capacitively loaded slow-wave transmission line phase shifter in 130nm CMOS",
abstract = "We present a novel full-band W-band capacitively loaded transmission line phase shifter. A classical slow-wave microstrip (S-MS) transmission line is loaded with tunable FET capacitors to enable continuous phase tuning. The design is implemented in GlobalFoundries US 8HP 130 nm SiGe BiCMOS process with the 7 metal layer option. A maximum phase shift of 95.59° is achieved with an insertion loss of -5 dB ± 1.5 dB across the band, yielding a FoM of 17.3. The design occupies a chip area of 0.67 mm2. This solid-state solution presents a suitable alternative to micro-electromechanical systems (MEMS) loaded line phase shifters without the need for high tuning voltages.",
keywords = "MMICs, MOS devices, Phase Shifters, Phased Arrays",
author = "Venter, {Johannes J.P.} and Tinus Stander",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; IEEE AFRICON 2017 ; Conference date: 18-09-2017 Through 20-09-2017",
year = "2017",
month = nov,
day = "3",
doi = "10.1109/AFRCON.2017.8095541",
language = "English",
series = "2017 IEEE AFRICON: Science, Technology and Innovation for Africa, AFRICON 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "555--558",
editor = "Cornish, {Darryn R.}",
booktitle = "2017 IEEE AFRICON",
address = "United States",
}