Transport mechanism of copper sulfide embedded carbon nitride thin films: A formation free memristor

Venkata K. Perla; Sarit K. Ghosh; Kaushik Mallick

doi:10.1039/d0ma00062k

Transport mechanism of copper sulfide embedded carbon nitride thin films: A formation free memristor

Venkata K. Perla, Sarit K. Ghosh, Kaushik Mallick

Chemical Sciences

University of Johannesburg

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Nonvolatile electrical resistive behaviour was demonstrated for a copper sulfide nanoparticle decorated carbon nitride (CSCN) based device. The copper sulfide-carbon nitride composite system was synthesized using a high temperature in situ protocol, where the sulfide particles were highly dispersed on the carbon nitride matrix. The CSCN composite was characterized by using different analytical techniques. The transport mechanism of the device followed Poole-Frenkel (PF) for the OFF-state, whereas ohmic behaviour dominated for the ON-state. An endurance study of the device was performed with a duty-cycle of 50% for 2 × 103 cycles and the nonvolatile behavior of the device was studied with a duty-cycle of 0.16% for 2 × 103 s. Both the endurance and nonvolatile behavior exhibited excellent stability of the device with an ON to OFF ratio of 104.

Original language	English
Pages (from-to)	228-234
Number of pages	7
Journal	Materials Advances
Volume	1
Issue number	2
DOIs	https://doi.org/10.1039/d0ma00062k
Publication status	Published - 2020

ASJC Scopus subject areas

Chemistry (miscellaneous)
General Materials Science

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title = "Transport mechanism of copper sulfide embedded carbon nitride thin films: A formation free memristor",

abstract = "Nonvolatile electrical resistive behaviour was demonstrated for a copper sulfide nanoparticle decorated carbon nitride (CSCN) based device. The copper sulfide-carbon nitride composite system was synthesized using a high temperature in situ protocol, where the sulfide particles were highly dispersed on the carbon nitride matrix. The CSCN composite was characterized by using different analytical techniques. The transport mechanism of the device followed Poole-Frenkel (PF) for the OFF-state, whereas ohmic behaviour dominated for the ON-state. An endurance study of the device was performed with a duty-cycle of 50% for 2 × 103 cycles and the nonvolatile behavior of the device was studied with a duty-cycle of 0.16% for 2 × 103 s. Both the endurance and nonvolatile behavior exhibited excellent stability of the device with an ON to OFF ratio of 104.",

author = "Perla, {Venkata K.} and Ghosh, {Sarit K.} and Kaushik Mallick",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2020",

doi = "10.1039/d0ma00062k",

language = "English",

volume = "1",

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journal = "Materials Advances",

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T1 - Transport mechanism of copper sulfide embedded carbon nitride thin films

T2 - A formation free memristor

AU - Perla, Venkata K.

AU - Ghosh, Sarit K.

AU - Mallick, Kaushik

PY - 2020

Y1 - 2020

N2 - Nonvolatile electrical resistive behaviour was demonstrated for a copper sulfide nanoparticle decorated carbon nitride (CSCN) based device. The copper sulfide-carbon nitride composite system was synthesized using a high temperature in situ protocol, where the sulfide particles were highly dispersed on the carbon nitride matrix. The CSCN composite was characterized by using different analytical techniques. The transport mechanism of the device followed Poole-Frenkel (PF) for the OFF-state, whereas ohmic behaviour dominated for the ON-state. An endurance study of the device was performed with a duty-cycle of 50% for 2 × 103 cycles and the nonvolatile behavior of the device was studied with a duty-cycle of 0.16% for 2 × 103 s. Both the endurance and nonvolatile behavior exhibited excellent stability of the device with an ON to OFF ratio of 104.

AB - Nonvolatile electrical resistive behaviour was demonstrated for a copper sulfide nanoparticle decorated carbon nitride (CSCN) based device. The copper sulfide-carbon nitride composite system was synthesized using a high temperature in situ protocol, where the sulfide particles were highly dispersed on the carbon nitride matrix. The CSCN composite was characterized by using different analytical techniques. The transport mechanism of the device followed Poole-Frenkel (PF) for the OFF-state, whereas ohmic behaviour dominated for the ON-state. An endurance study of the device was performed with a duty-cycle of 50% for 2 × 103 cycles and the nonvolatile behavior of the device was studied with a duty-cycle of 0.16% for 2 × 103 s. Both the endurance and nonvolatile behavior exhibited excellent stability of the device with an ON to OFF ratio of 104.

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U2 - 10.1039/d0ma00062k

DO - 10.1039/d0ma00062k

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EP - 234

JO - Materials Advances

JF - Materials Advances

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Transport mechanism of copper sulfide embedded carbon nitride thin films: A formation free memristor

Abstract

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