Titanium single-electron transistor fabricated by electron-beam lithography

Mika A. Sillanpää; Pertti J. Hakonen

doi:10.1016/S1386-9477(01)00491-X

Titanium single-electron transistor fabricated by electron-beam lithography

Mika A. Sillanpää, Pertti J. Hakonen

Aalto University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron-beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single-electron transistor which operated at T < 0.4 K and had a moderate charge noise of 2.5 × 10^-3 e/√Hz at 10 Hz. Based on non-linearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV. The non-superconducting Ti junctions can be useful in several applications.

Original language	English
Pages (from-to)	41-47
Number of pages	7
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	15
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(01)00491-X
Publication status	Published - Sept 2002
Externally published	Yes

Keywords

Coulomb blockade
Single-electron transistors
Tunneling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(01)00491-X

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title = "Titanium single-electron transistor fabricated by electron-beam lithography",

abstract = "A method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron-beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single-electron transistor which operated at T < 0.4 K and had a moderate charge noise of 2.5 × 10-3 e/√Hz at 10 Hz. Based on non-linearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV. The non-superconducting Ti junctions can be useful in several applications.",

keywords = "Coulomb blockade, Single-electron transistors, Tunneling",

author = "Sillanp{\"a}{\"a}, \{Mika A.\} and Hakonen, \{Pertti J.\}",

year = "2002",

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doi = "10.1016/S1386-9477(01)00491-X",

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volume = "15",

pages = "41--47",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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T1 - Titanium single-electron transistor fabricated by electron-beam lithography

AU - Sillanpää, Mika A.

AU - Hakonen, Pertti J.

PY - 2002/9

Y1 - 2002/9

N2 - A method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron-beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single-electron transistor which operated at T < 0.4 K and had a moderate charge noise of 2.5 × 10-3 e/√Hz at 10 Hz. Based on non-linearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV. The non-superconducting Ti junctions can be useful in several applications.

AB - A method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron-beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single-electron transistor which operated at T < 0.4 K and had a moderate charge noise of 2.5 × 10-3 e/√Hz at 10 Hz. Based on non-linearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV. The non-superconducting Ti junctions can be useful in several applications.

KW - Coulomb blockade

KW - Single-electron transistors

KW - Tunneling

UR - https://www.scopus.com/pages/publications/0036723541

U2 - 10.1016/S1386-9477(01)00491-X

DO - 10.1016/S1386-9477(01)00491-X

M3 - Article

AN - SCOPUS:0036723541

SN - 1386-9477

VL - 15

SP - 41

EP - 47

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

ER -

Titanium single-electron transistor fabricated by electron-beam lithography

Abstract

Keywords

ASJC Scopus subject areas

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