Titanium single-electron transistor fabricated by electron-beam lithography

Mika A. Sillanpää, Pertti J. Hakonen

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron-beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single-electron transistor which operated at T < 0.4 K and had a moderate charge noise of 2.5 × 10-3 e/√Hz at 10 Hz. Based on non-linearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV. The non-superconducting Ti junctions can be useful in several applications.

Original languageEnglish
Pages (from-to)41-47
Number of pages7
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1
Publication statusPublished - Sept 2002
Externally publishedYes


  • Coulomb blockade
  • Single-electron transistors
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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