@inproceedings{98f97f346d7549598b116b41a4d0f46b,
title = "Thermal and flicker noise improvement in short-channel CMOS detectors",
abstract = "Integrated circuit (IC) technology has emerged as a suitable platform for infrared (IR) detector development. This technology is however susceptible to on-chip intrinsic noise. By using double-gate MOSFETs for detectors in the near-IR band, noise performance in the readout circuitry is improved, thereby enhancing the overall performance of these detectors. A 1 dB reduction in low-frequency noise is achieved, which is verified through simulations. It is shown that by using short-channel devices that noise improvement is furthermore obtained due to reduction in threshold voltage variation. The double-gate concept is applied in simulation to the three-transistor pixel topology and can also be implemented in other detector topologies such as the four-transistor pixel topology, since readout noise is not limited to specific IR detector topologies. The overall performance of near-IR detectors and the fill factor are significantly improved..",
keywords = "Charge-coupled devices, heterojunctions, infrared detectors, noise, photodetectors",
author = "Johan Venter and Saurabh Sinha",
year = "2014",
doi = "10.1117/12.2064735",
language = "English",
isbn = "9781628413243",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Sensors, MEMS, and Electro-Optical Systems",
address = "United States",
note = "3rd South African Conference on Sensors, MEMS, and Electro-Optical Systems, SMEOS 2014 ; Conference date: 17-03-2014 Through 19-03-2014",
}