The tunnelling and electron injection reliabilities for FG transistors

Keyphrases

• Reliability Issues 100%
• Tunneling Injection 100%
• Floating-gate Transistor 100%
• Charge Retention 66%
• Charge Trapping 66%
• Oxide Thickness 66%
• Floating-gate Devices 66%
• Threshold Voltage 33%
• Charge Leakage 33%
• Floating Gate 33%
• Fabrication Defects 33%
• Switching Application 33%
• Drain Current 33%
• Current Leakage 33%
• Voltage Change 33%
• Coupling Capacitor 33%
• Memory Application 33%
• Voltage Sweep 33%
• Nanoscale Technology 33%
• Retention Failure 33%
• Gate Voltage 33%
• Drain Voltage 33%

Engineering

• Floating Gate 100%
• Electron Injection 100%
• Tunnel Construction 100%
• Reliability Issue 60%
• Oxide Thickness 40%
• Capacitive Coupling 20%
• Defects 20%
• Process Variation 20%
• Coupling Capacitor 20%
• Gate Voltage 20%
• Current Drain 20%
• Drain Voltage 20%
• Device Scaling 20%
• Nanoscale 20%
• Retention Time 20%

Material Science

• Transistor 100%
• Oxide Compound 100%
• Capacitor 66%