The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu2+ phosphors

R. L. Nyenge; H. C. Swart; O. M. Ntwaeaborwa

doi:10.1016/j.physb.2015.08.046

The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu²⁺ phosphors

R. L. Nyenge, H. C. Swart, O. M. Ntwaeaborwa

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu²⁺. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.

Original language	English
Pages (from-to)	186-190
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	480
DOIs	https://doi.org/10.1016/j.physb.2015.08.046
Publication status	Published - 1 Jan 2016
Externally published	Yes

Keywords

Atomic force microscope
Photoluminescence
Pulsed laser deposition
Substrate temperature

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2015.08.046

Cite this

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title = "The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu2+ phosphors",

abstract = "The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu2+. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.",

keywords = "Atomic force microscope, Photoluminescence, Pulsed laser deposition, Substrate temperature",

author = "Nyenge, {R. L.} and Swart, {H. C.} and Ntwaeaborwa, {O. M.}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2016",

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doi = "10.1016/j.physb.2015.08.046",

language = "English",

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T1 - The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu2+ phosphors

AU - Nyenge, R. L.

AU - Swart, H. C.

AU - Ntwaeaborwa, O. M.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu2+. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.

AB - The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu2+. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.

KW - Atomic force microscope

KW - Photoluminescence

KW - Pulsed laser deposition

KW - Substrate temperature

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DO - 10.1016/j.physb.2015.08.046

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