The fate of implanted 19F ions in diamond and their theoretical modelling

J. P.F. Sellschop; S. H. Connell; K. Bharuth-Ram; H. Appel; E. Sideras-Haddad; M. C. Stemmet

doi:10.1016/0921-5107(92)90217-W

The fate of implanted ¹⁹F ions in diamond and their theoretical modelling

J. P.F. Sellschop, S. H. Connell, K. Bharuth-Ram, H. Appel, E. Sideras-Haddad, M. C. Stemmet

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The ubiquitous use of ion implantation and the simultaneous interest in the emplacement of selected impurities in the matrix of choice bring added emphasis to the need for a quantitative understanding of the residence sites adopted by such imputities. The time-dependent perturbed angular distribution technique has been used to study the case of fluorine implanted in diamond. Careful examination is presented of the dependence of the perturbation parameters on the characteristics of the implant sites. These comprehensive investigations reveal the power of the technique in the richness of detail exposed and make possible the theoretical modelling of the data.

Original language	English
Pages (from-to)	227-234
Number of pages	8
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	11
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-5107(92)90217-W
Publication status	Published - 15 Jan 1992
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(92)90217-W

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AU - Sellschop, J. P.F.

AU - Connell, S. H.

AU - Bharuth-Ram, K.

AU - Appel, H.

AU - Sideras-Haddad, E.

AU - Stemmet, M. C.

PY - 1992/1/15

Y1 - 1992/1/15

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AB - The ubiquitous use of ion implantation and the simultaneous interest in the emplacement of selected impurities in the matrix of choice bring added emphasis to the need for a quantitative understanding of the residence sites adopted by such imputities. The time-dependent perturbed angular distribution technique has been used to study the case of fluorine implanted in diamond. Careful examination is presented of the dependence of the perturbation parameters on the characteristics of the implant sites. These comprehensive investigations reveal the power of the technique in the richness of detail exposed and make possible the theoretical modelling of the data.

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ER -

The fate of implanted ¹⁹F ions in diamond and their theoretical modelling

Abstract

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