Abstract
In this study, SrAl2O4:Eu2+,Dy3+ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f65d1→4f7 transition of Eu2+. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.
Original language | English |
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Pages (from-to) | 4436-4439 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 404 |
Issue number | 22 |
DOIs | |
Publication status | Published - 1 Dec 2009 |
Externally published | Yes |
Keywords
- PLD
- Photoluminescence
- SrAlO:Eu,Dy
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering