The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu2+,Dy3+ thin films

O. M. Ntwaeaborwa, P. D. Nsimama, J. T. Abiade, E. Coetsee, H. C. Swart

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

In this study, SrAl2O4:Eu2+,Dy3+ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f65d1→4f7 transition of Eu2+. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.

Original languageEnglish
Pages (from-to)4436-4439
Number of pages4
JournalPhysica B: Condensed Matter
Volume404
Issue number22
DOIs
Publication statusPublished - 1 Dec 2009
Externally publishedYes

Keywords

  • PLD
  • Photoluminescence
  • SrAlO:Eu,Dy
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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