The Effects of Silicon Carbide Reinforcement on the Properties of Cu/SiCp Composites

Copper, possessing a desirable combination of high electrical and thermal conductivities is widely used in thermal and electronic applications. The prospective requirements for dependable materials in electronic industries are always increasing. The main pronounced failure that occurs during microelectronic circuits’ application involves thermal fatigue. Heat generated in electronic packages can be dissipated by developing suitable materials as heat sinks. Copper metal matrix composites reinforced with silicon carbide (SiC) proffer possibility of meeting these demands. This research work entails producing copper matrix using silicon carbides (SiC) as reinforcement. Copper silicon carbide composites were produced in 80 % Cu-20 % SiC, 70 % Cu-30 % SiC, 60 % Cu-40 % SiC, 50 % Cu-50 % SiC, 40 % Cu-60 % SiC ratios with an average grain size of 212 μ m, 425 μ m and 710 μ m respectively via liquid metallurgy method. The result revealed that increasing volume fraction and particle sizes of the particulate had significant effect on the thermal and electrical conductivity of the composites.