The effect of oxygen pressure on the structure, morphology and photoluminescence intensity of pulsed laser deposited Gd2O 2S:Tb3+ thin film phosphor

J. J. Dolo, O. M. Ntwaeaborwa, J. J. Terblans, E. Coetsee, B. F. Dejene, M. M. Biggs, H. C. Swart

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Luminescent Gd2O2S:Tb3+ phosphor thin films were grown on Si (100) substrates, using the pulsed laser deposition technique. The films were grown in 100 to 300 mTorr oxygen gas (O2) atmospheres when the substrate temperature was kept constant at 400 or 600°C. The effect of the O2 ambient on the structure and morphological properties of the films were analyzed using x-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM), respectively. Spherical nanoparticles deposited on the Si (100) substrates were shown to crystallize in the hexagonal structure of Gd2O2S. The photoluminescence (PL) spectra of all the films were characterized by a stable green emission peak with a maximum at 545 nm. Improved PL intensity was observed from the films deposited at higher oxygen pressures and higher substrate temperatures. Particles sizes of the nanoparticles deposited under the different conditions varied between 19 and 36 nm for the different samples. Smaller and more densely packet particles were produces at the higher O 2 pressures and the higher temperature.

Original languageEnglish
Pages (from-to)655-659
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume101
Issue number4
DOIs
Publication statusPublished - Dec 2010
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science

Fingerprint

Dive into the research topics of 'The effect of oxygen pressure on the structure, morphology and photoluminescence intensity of pulsed laser deposited Gd2O 2S:Tb3+ thin film phosphor'. Together they form a unique fingerprint.

Cite this