The effect of oxygen pressure on the structure, morphology and photoluminescence intensity of pulsed laser deposited Gd₂O ₂S:Tb³⁺ thin film phosphor

Luminescent Gd₂O₂S:Tb³⁺ phosphor thin films were grown on Si (100) substrates, using the pulsed laser deposition technique. The films were grown in 100 to 300 mTorr oxygen gas (O₂) atmospheres when the substrate temperature was kept constant at 400 or 600°C. The effect of the O₂ ambient on the structure and morphological properties of the films were analyzed using x-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM), respectively. Spherical nanoparticles deposited on the Si (100) substrates were shown to crystallize in the hexagonal structure of Gd₂O₂S. The photoluminescence (PL) spectra of all the films were characterized by a stable green emission peak with a maximum at 545 nm. Improved PL intensity was observed from the films deposited at higher oxygen pressures and higher substrate temperatures. Particles sizes of the nanoparticles deposited under the different conditions varied between 19 and 36 nm for the different samples. Smaller and more densely packet particles were produces at the higher O ₂ pressures and the higher temperature.