The design of a 5 GHz VCO with phase noise performance analysis using MOSFET-based current sources

V. B. Bhana, J. W. Lambrechts, S. Sinha

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper describes the design of a 5 GHz cross-coupled LC VCO implemented in the single-supply S35D4M5 0.35 m BiCMOS process by Austriamicrosystems. The paper further discusses the phase noise performance of various MOSFET-based current source topologies when implemented within the VCO. MOSFET current source characteristics such as flicker noise, device numbers, feedback, and the output resistance were investigated in order to achieve the best phase noise performance. The VCO operates with a tuning range of 4 % about the centre frequency of 5 GHz. A phase noise of 108.0 dBc/Hz at a 1 MHz offset from the carrier frequency is achieved. The design also demonstrates a 60 % improvement in frequency drift within the commercial temperature range when temperature stability circuitry is introduced.

Original languageEnglish
Title of host publication2011 International Semiconductor Conference, CAS 2011 Proceedings
Pages335-338
Number of pages4
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event34th International Semiconductor Conference, CAS 2011 - Sinaia, Romania
Duration: 17 Oct 201119 Oct 2011

Publication series

NameProceedings of the International Semiconductor Conference, CAS
Volume2

Conference

Conference34th International Semiconductor Conference, CAS 2011
Country/TerritoryRomania
CitySinaia
Period17/10/1119/10/11

Keywords

  • BiCMOS process
  • HBT
  • LC oscillator
  • MOSFET
  • NMOS
  • PMOS
  • PVT stability
  • Q factor
  • VCO
  • phase noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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