Abstract
In this letter, it is shown that doctrines behind the devised switch-mode design method investigated by means of simulations for 0.35-μm technology are indeed technology node and application independent.Experimental results verifying this claim are presented for 180-nm SiGe BiCMOS process. Furthermore, a possible expansion of the method is proposed for mm-wave applications.
| Original language | English |
|---|---|
| Pages (from-to) | 2724-2728 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 53 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 2011 |
| Externally published | Yes |
Keywords
- BiCMOS
- computer-aided design
- mm-wave applications
- power amplifier
- spiral inductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering