Superconducting gap structure in the electron doped BiS2-based superconductor

A. Bhattacharyya, D. T. Adroja, A. D. Hillier, R. Jha, V. P.S. Awana, A. M. Strydom

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The influence of electron doping on semimetallic SrFBiS2 has been investigated by means of resistivity, zero and transverse - field (ZF/TF) muon spin relaxation/rotation (μSR) experiments. SrFBiS2 is semimetallic in its normal state and small amounts of La doping results in bulk superconductivity at 2.8 K, at ambient pressure. The temperature dependence of the superfluid density as determined by TF-μSR can be best modelled by an isotropic s - wave type superconducting gap. We have estimated the magnetic penetration depth λL (0) = 1087 nm, superconducting carrier density ns = 3.7×1026carriers m-3 and effective-mass enhancement m = 1.558 me. Additionally, there is no clear sign of the occurrence of spontaneous internal magnetic fields below Tc, which implies that the superconducting state in this material can not be categorized by the broken time-reversal symmetry which is in agreement with the previous theoretical prediction.

Original languageEnglish
Article number265602
JournalJournal of Physics Condensed Matter
Volume29
Issue number26
DOIs
Publication statusPublished - 30 May 2017

Keywords

  • BiS based superconductor
  • Muon spin spectroscopy
  • layered crystal structure
  • superconducting gap structure

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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