Structural magnetic and transport properties of a new valence fluctuating compound: CeRhSi2

D. T. Adroja; B. D. Rainford

doi:10.1016/0304-8853(93)90502-S

Structural magnetic and transport properties of a new valence fluctuating compound: CeRhSi₂

D. T. Adroja, B. D. Rainford

University of Southampton

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The compound CeRhSi₂, crystallizing in the orthorhombic CeNiSi₂-type structure, has been synthesized and studied by magnetic susceptibility and electrical resistivity between 1.7 and 300 K. The unit cell volume of CeRhSi₂ shows a deviation from the lanthanide contraction. The temperature dependent magnetic susceptibility of CeRhSi₂ exhibits a broad maximum at 80 K, which is characteristic of Ce based valence fluctuating compounds. The electric resistivity also shows a broad maximum at about 100 K, and exhibits a T² dependence at low temperatures. These measurements confirm the valence fluctuating nature of CeRhSi₂. An analysis is presented of the susceptibility data on the basis of the Coqblin-Schrieffer model, and of the resistivity data on the basis of the Freimuth model.

Original language	English
Pages (from-to)	54-58
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	119
Issue number	1-2
DOIs	https://doi.org/10.1016/0304-8853(93)90502-S
Publication status	Published - 1 Feb 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Structural magnetic and transport properties of a new valence fluctuating compound: CeRhSi2",

abstract = "The compound CeRhSi2, crystallizing in the orthorhombic CeNiSi2-type structure, has been synthesized and studied by magnetic susceptibility and electrical resistivity between 1.7 and 300 K. The unit cell volume of CeRhSi2 shows a deviation from the lanthanide contraction. The temperature dependent magnetic susceptibility of CeRhSi2 exhibits a broad maximum at 80 K, which is characteristic of Ce based valence fluctuating compounds. The electric resistivity also shows a broad maximum at about 100 K, and exhibits a T2 dependence at low temperatures. These measurements confirm the valence fluctuating nature of CeRhSi2. An analysis is presented of the susceptibility data on the basis of the Coqblin-Schrieffer model, and of the resistivity data on the basis of the Freimuth model.",

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AU - Rainford, B. D.

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N2 - The compound CeRhSi2, crystallizing in the orthorhombic CeNiSi2-type structure, has been synthesized and studied by magnetic susceptibility and electrical resistivity between 1.7 and 300 K. The unit cell volume of CeRhSi2 shows a deviation from the lanthanide contraction. The temperature dependent magnetic susceptibility of CeRhSi2 exhibits a broad maximum at 80 K, which is characteristic of Ce based valence fluctuating compounds. The electric resistivity also shows a broad maximum at about 100 K, and exhibits a T2 dependence at low temperatures. These measurements confirm the valence fluctuating nature of CeRhSi2. An analysis is presented of the susceptibility data on the basis of the Coqblin-Schrieffer model, and of the resistivity data on the basis of the Freimuth model.

AB - The compound CeRhSi2, crystallizing in the orthorhombic CeNiSi2-type structure, has been synthesized and studied by magnetic susceptibility and electrical resistivity between 1.7 and 300 K. The unit cell volume of CeRhSi2 shows a deviation from the lanthanide contraction. The temperature dependent magnetic susceptibility of CeRhSi2 exhibits a broad maximum at 80 K, which is characteristic of Ce based valence fluctuating compounds. The electric resistivity also shows a broad maximum at about 100 K, and exhibits a T2 dependence at low temperatures. These measurements confirm the valence fluctuating nature of CeRhSi2. An analysis is presented of the susceptibility data on the basis of the Coqblin-Schrieffer model, and of the resistivity data on the basis of the Freimuth model.

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Structural magnetic and transport properties of a new valence fluctuating compound: CeRhSi₂

Abstract

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