Structural and photoemission studies of SrF2 adsorption on Si(001)

L. Pasquali, S. M. Suturin, A. Balanev, A. K. Kaveev, N. S. Sokolov, B. P. Doyle, F. Borgatti, A. Giglia, N. Mahne, M. Pedio, S. Nannarone

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The growth modes of SrF2 on Si(001) are investigated by AFM and ultraviolet photoemission. Two growth regimes are identified according to the substrate temperature during deposition, resulting in flat and ordered fluoride layers or in nano-patterned films with characteristic triangular islands. The flat layer growth obtained at high temperature is accompanied by molecular dissociation at the interface.

Original languageEnglish
Title of host publicationProceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Pages35-39
Number of pages5
DOIs
Publication statusPublished - Mar 2006
Externally publishedYes
EventICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France
Duration: 3 Jul 20058 Jul 2005

Publication series

NameJournal De Physique. IV : JP
Volume132
ISSN (Print)1155-4339
ISSN (Electronic)1764-7177

Conference

ConferenceICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Country/TerritoryFrance
CityAix-en-Provence
Period3/07/058/07/05

ASJC Scopus subject areas

  • General Physics and Astronomy

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