Structural and optical characterization of single-phase CuIn(Se,S) 2 thin films deposited using a two-step process

C. J. Sheppard; V. Alberts; J. R. Botha

doi:10.1002/pssc.200776837

Structural and optical characterization of single-phase CuIn(Se,S) ₂ thin films deposited using a two-step process

C. J. Sheppard, V. Alberts, J. R. Botha

Physics

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

CuInSe₂ has a band gap of about 1.0 eV, which limits the conversion efficiency of complete CuInSe₂/CdS/ZnO devices. In order to increase the conversion efficiency of devices, it is necessary to increase the band gap value of the absorber films to about 1.2 eV. This can be achieved by systematically substituting some indium with a group III element and/or selenium with another group VI elements. The substitution of In and/or Se results in a shrinkage of the lattice parameters and thus an increase in the band gap value of the absorber films. However, this process is extremely complicated, especially for conventional two-step growth processes in which metallic alloys are exposed to Se and/or S species. In this contribution, the optical and structural properties of homogeneous singlephase CuIn(Se,S) ₂ alloys are demonstrated for the novel two-step deposition process.

Original language	English
Pages (from-to)	641-644
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	2
DOIs	https://doi.org/10.1002/pssc.200776837
Publication status	Published - 2008
Event	E-MRS 2007 Spring Meeting-Symposium F - Novel Gain Materials and Devices Based on III-N-V Compounds - Strasbourg, France Duration: 28 May 2007 → 1 Jun 2007

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Structural and optical characterization of single-phase CuIn(Se,S) 2 thin films deposited using a two-step process",

abstract = "CuInSe2 has a band gap of about 1.0 eV, which limits the conversion efficiency of complete CuInSe2/CdS/ZnO devices. In order to increase the conversion efficiency of devices, it is necessary to increase the band gap value of the absorber films to about 1.2 eV. This can be achieved by systematically substituting some indium with a group III element and/or selenium with another group VI elements. The substitution of In and/or Se results in a shrinkage of the lattice parameters and thus an increase in the band gap value of the absorber films. However, this process is extremely complicated, especially for conventional two-step growth processes in which metallic alloys are exposed to Se and/or S species. In this contribution, the optical and structural properties of homogeneous singlephase CuIn(Se,S) 2 alloys are demonstrated for the novel two-step deposition process.",

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T1 - Structural and optical characterization of single-phase CuIn(Se,S) 2 thin films deposited using a two-step process

AU - Sheppard, C. J.

AU - Alberts, V.

AU - Botha, J. R.

PY - 2008

Y1 - 2008

N2 - CuInSe2 has a band gap of about 1.0 eV, which limits the conversion efficiency of complete CuInSe2/CdS/ZnO devices. In order to increase the conversion efficiency of devices, it is necessary to increase the band gap value of the absorber films to about 1.2 eV. This can be achieved by systematically substituting some indium with a group III element and/or selenium with another group VI elements. The substitution of In and/or Se results in a shrinkage of the lattice parameters and thus an increase in the band gap value of the absorber films. However, this process is extremely complicated, especially for conventional two-step growth processes in which metallic alloys are exposed to Se and/or S species. In this contribution, the optical and structural properties of homogeneous singlephase CuIn(Se,S) 2 alloys are demonstrated for the novel two-step deposition process.

AB - CuInSe2 has a band gap of about 1.0 eV, which limits the conversion efficiency of complete CuInSe2/CdS/ZnO devices. In order to increase the conversion efficiency of devices, it is necessary to increase the band gap value of the absorber films to about 1.2 eV. This can be achieved by systematically substituting some indium with a group III element and/or selenium with another group VI elements. The substitution of In and/or Se results in a shrinkage of the lattice parameters and thus an increase in the band gap value of the absorber films. However, this process is extremely complicated, especially for conventional two-step growth processes in which metallic alloys are exposed to Se and/or S species. In this contribution, the optical and structural properties of homogeneous singlephase CuIn(Se,S) 2 alloys are demonstrated for the novel two-step deposition process.

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Structural and optical characterization of single-phase CuIn(Se,S) ₂ thin films deposited using a two-step process

Abstract

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