Structural and morphology analysis of annealed Y                         3                         (Al,Ga)                          5                         O                         12                         :Tb thin films synthesized by pulsed laser deposition

A. Yousif; H. C. Swart; J. J. Terblans; R. M. Jafer; Vinod Kumar; R. E. Kroon; O. M. Ntwaeaborwa; M. M. Duvenhage

doi:10.1016/j.apsusc.2014.03.185

Structural and morphology analysis of annealed Y ₃ (Al,Ga) ₅ O ₁₂ :Tb thin films synthesized by pulsed laser deposition

A. Yousif, H. C. Swart, J. J. Terblans, R. M. Jafer, Vinod Kumar, R. E. Kroon, O. M. Ntwaeaborwa, M. M. Duvenhage

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Y ₃ (Al,Ga) ₅ O ₁₂ :Tb thin films were grown in an O ₂ working atmosphere on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. Micrometer and sub-micrometer sized particulates were present on the surface and inside the Y ₃ (Al,Ga) ₅ O ₁₂ :Tb thin films. Secondary electron micrographs showed that particulates were present on the surface and X-ray spectrometry mapping showed that the particulates consist of different concentrations of Y, Tb, Ga and Al. Time of flight secondary ion mass spectroscopy results revealed that the as-deposited film was filled with agglomerated particles of Ga and Al of different sizes. The agglomerated Ga particles seemed to be evenly distributed after annealing at 800 °C and the film surface and interface were enriched with Ga after annealing. Atomic force microscopy confirmed the distribution of the agglomerated Ga particles. The region with the evenly distributed Ga showed a surface with a smooth morphology. Shifts in the peak position to lower diffraction angles were observed in the XRD patterns of the annealed film compared to the pattern of the Y ₃ (Al,Ga) ₅ O ₁₂ :Tb powder. The optical measurements of the Ga enriched film indicated that a new excitation band different from the original Y ₃ (Al,Ga) ₅ O ₁₂ :Tb powder was obtained.

Original language	English
Pages (from-to)	732-739
Number of pages	8
Journal	Applied Surface Science
Volume	305
DOIs	https://doi.org/10.1016/j.apsusc.2014.03.185
Publication status	Published - 30 Jun 2014
Externally published	Yes

Keywords

Agglomerated Ga particles
PLD thin films

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2014.03.185

Cite this

Yousif, A., Swart, H. C., Terblans, J. J., Jafer, R. M., Kumar, V., Kroon, R. E., Ntwaeaborwa, O. M., & Duvenhage, M. M. (2014). Structural and morphology analysis of annealed Y ₃ (Al,Ga) ₅ O ₁₂ :Tb thin films synthesized by pulsed laser deposition Applied Surface Science, 305, 732-739. https://doi.org/10.1016/j.apsusc.2014.03.185

Yousif, A. ; Swart, H. C. ; Terblans, J. J. et al. / Structural and morphology analysis of annealed Y ₃ (Al,Ga) ₅ O ₁₂ :Tb thin films synthesized by pulsed laser deposition In: Applied Surface Science. 2014 ; Vol. 305. pp. 732-739.

@article{0e78de79832a43fc9ac9545b1160cca1,

title = " Structural and morphology analysis of annealed Y 3 (Al,Ga) 5 O 12 :Tb thin films synthesized by pulsed laser deposition ",

abstract = " Y 3 (Al,Ga) 5 O 12 :Tb thin films were grown in an O 2 working atmosphere on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. Micrometer and sub-micrometer sized particulates were present on the surface and inside the Y 3 (Al,Ga) 5 O 12 :Tb thin films. Secondary electron micrographs showed that particulates were present on the surface and X-ray spectrometry mapping showed that the particulates consist of different concentrations of Y, Tb, Ga and Al. Time of flight secondary ion mass spectroscopy results revealed that the as-deposited film was filled with agglomerated particles of Ga and Al of different sizes. The agglomerated Ga particles seemed to be evenly distributed after annealing at 800 °C and the film surface and interface were enriched with Ga after annealing. Atomic force microscopy confirmed the distribution of the agglomerated Ga particles. The region with the evenly distributed Ga showed a surface with a smooth morphology. Shifts in the peak position to lower diffraction angles were observed in the XRD patterns of the annealed film compared to the pattern of the Y 3 (Al,Ga) 5 O 12 :Tb powder. The optical measurements of the Ga enriched film indicated that a new excitation band different from the original Y 3 (Al,Ga) 5 O 12 :Tb powder was obtained.",

keywords = "Agglomerated Ga particles, PLD thin films",

author = "A. Yousif and Swart, {H. C.} and Terblans, {J. J.} and Jafer, {R. M.} and Vinod Kumar and Kroon, {R. E.} and Ntwaeaborwa, {O. M.} and Duvenhage, {M. M.}",

year = "2014",

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day = "30",

doi = "10.1016/j.apsusc.2014.03.185",

language = "English",

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Yousif, A, Swart, HC, Terblans, JJ, Jafer, RM, Kumar, V, Kroon, RE, Ntwaeaborwa, OM & Duvenhage, MM 2014, ' Structural and morphology analysis of annealed Y ₃ (Al,Ga) ₅ O ₁₂ :Tb thin films synthesized by pulsed laser deposition ', Applied Surface Science, vol. 305, pp. 732-739. https://doi.org/10.1016/j.apsusc.2014.03.185

Structural and morphology analysis of annealed Y ₃ (Al,Ga) ₅ O ₁₂ :Tb thin films synthesized by pulsed laser deposition . / Yousif, A.; Swart, H. C.; Terblans, J. J. et al.
In: Applied Surface Science, Vol. 305, 30.06.2014, p. 732-739.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Structural and morphology analysis of annealed Y 3 (Al,Ga) 5 O 12 :Tb thin films synthesized by pulsed laser deposition

AU - Yousif, A.

AU - Swart, H. C.

AU - Terblans, J. J.

AU - Jafer, R. M.

AU - Kumar, Vinod

AU - Kroon, R. E.

AU - Ntwaeaborwa, O. M.

AU - Duvenhage, M. M.

PY - 2014/6/30

Y1 - 2014/6/30

N2 - Y 3 (Al,Ga) 5 O 12 :Tb thin films were grown in an O 2 working atmosphere on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. Micrometer and sub-micrometer sized particulates were present on the surface and inside the Y 3 (Al,Ga) 5 O 12 :Tb thin films. Secondary electron micrographs showed that particulates were present on the surface and X-ray spectrometry mapping showed that the particulates consist of different concentrations of Y, Tb, Ga and Al. Time of flight secondary ion mass spectroscopy results revealed that the as-deposited film was filled with agglomerated particles of Ga and Al of different sizes. The agglomerated Ga particles seemed to be evenly distributed after annealing at 800 °C and the film surface and interface were enriched with Ga after annealing. Atomic force microscopy confirmed the distribution of the agglomerated Ga particles. The region with the evenly distributed Ga showed a surface with a smooth morphology. Shifts in the peak position to lower diffraction angles were observed in the XRD patterns of the annealed film compared to the pattern of the Y 3 (Al,Ga) 5 O 12 :Tb powder. The optical measurements of the Ga enriched film indicated that a new excitation band different from the original Y 3 (Al,Ga) 5 O 12 :Tb powder was obtained.

AB - Y 3 (Al,Ga) 5 O 12 :Tb thin films were grown in an O 2 working atmosphere on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. Micrometer and sub-micrometer sized particulates were present on the surface and inside the Y 3 (Al,Ga) 5 O 12 :Tb thin films. Secondary electron micrographs showed that particulates were present on the surface and X-ray spectrometry mapping showed that the particulates consist of different concentrations of Y, Tb, Ga and Al. Time of flight secondary ion mass spectroscopy results revealed that the as-deposited film was filled with agglomerated particles of Ga and Al of different sizes. The agglomerated Ga particles seemed to be evenly distributed after annealing at 800 °C and the film surface and interface were enriched with Ga after annealing. Atomic force microscopy confirmed the distribution of the agglomerated Ga particles. The region with the evenly distributed Ga showed a surface with a smooth morphology. Shifts in the peak position to lower diffraction angles were observed in the XRD patterns of the annealed film compared to the pattern of the Y 3 (Al,Ga) 5 O 12 :Tb powder. The optical measurements of the Ga enriched film indicated that a new excitation band different from the original Y 3 (Al,Ga) 5 O 12 :Tb powder was obtained.

KW - Agglomerated Ga particles

KW - PLD thin films

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Yousif A, Swart HC, Terblans JJ, Jafer RM, Kumar V, Kroon RE et al. Structural and morphology analysis of annealed Y ₃ (Al,Ga) ₅ O ₁₂ :Tb thin films synthesized by pulsed laser deposition Applied Surface Science. 2014 Jun 30;305:732-739. doi: 10.1016/j.apsusc.2014.03.185