Abstract
FT Raman spectrum of ZnO nanowalls and nanorods showed optical phonon and multiphonon peaks of E 2 (high) and E 2 (low), E 1 (TO and LO) and A 1 (TO and LO), 2E 2, [E 2 + A 1 (LO)], [E 1 (LO) + A 1 (TO)] and [E 1 (TO) + A(LO)] modes at (108.9 and 434.46 cm-1), (415.24 and 583.32), (383.49 and 574.84), 215.43, 676.24, 956.02 and 998.98 cm-1 respectively. In nanowalls, the appearance of B 2 Raman inactive mode at 276.46 cm -1 is attributed to the existence of built in electric field in the crystallites of ZnO. The weak bands at 516.78 and 467.56 cm -1 confirmed the presence of highly localized modes near the grain boundaries having electric field within the grains close to grain boundary The broadening and asymmetry of the first order E 2 (high) optical phonon mode reveal the spatial confinement of optical phonons.
| Original language | English |
|---|---|
| Pages (from-to) | 814-817 |
| Number of pages | 4 |
| Journal | Journal of Nano- and Electronic Physics |
| Volume | 3 |
| Issue number | 1 PART4 |
| Publication status | Published - 2011 |
| Externally published | Yes |
Keywords
- II-VI semiconductor
- Nanowires
- Raman spectroscopy
- Zinc oxide
ASJC Scopus subject areas
- Radiation
- General Materials Science
- Condensed Matter Physics