Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology

Xu Kaikai; Kingsley A. Ogudo; Lukas W. Snyman; Herzl Aharoni

Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology

Xu Kaikai
, Kingsley A. Ogudo
, Lukas W. Snyman
, Herzl Aharoni

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.

Original language	English
Pages (from-to)	164-166
Number of pages	3
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	11
Issue number	3-4
Publication status	Published - 1 Mar 2017
Externally published	Yes

Keywords

Frequency
Interconnect
Optoelectronics
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{00e453fe3f6b42d890a8566a7af49d43,

title = "Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology",

abstract = "A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.",

keywords = "Frequency, Interconnect, Optoelectronics, Silicon",

author = "Xu Kaikai and Ogudo, \{Kingsley A.\} and Snyman, \{Lukas W.\} and Herzl Aharoni",

year = "2017",

month = mar,

day = "1",

language = "English",

volume = "11",

pages = "164--166",

journal = "Optoelectronics and Advanced Materials, Rapid Communications",

issn = "1842-6573",

publisher = "National Institute of Optoelectronics",

number = "3-4",

}

Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology. / Kaikai, Xu; Ogudo, Kingsley A.; Snyman, Lukas W. et al.
In: Optoelectronics and Advanced Materials, Rapid Communications, Vol. 11, No. 3-4, 01.03.2017, p. 164-166.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology

AU - Kaikai, Xu

AU - Ogudo, Kingsley A.

AU - Snyman, Lukas W.

AU - Aharoni, Herzl

PY - 2017/3/1

Y1 - 2017/3/1

N2 - A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.

AB - A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.

KW - Frequency

KW - Interconnect

KW - Optoelectronics

KW - Silicon

UR - https://www.scopus.com/pages/publications/85020040667

M3 - Article

AN - SCOPUS:85020040667

SN - 1842-6573

VL - 11

SP - 164

EP - 166

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 3-4

ER -

Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology

Abstract

Keywords

ASJC Scopus subject areas

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