Silicon LEDs toward high frequency on-chip link

Kaikai Xu; Lukas W. Snyman; Jean Luc Polleux; Kingsley A. Ogudo; Carlos Viana; Qi Yu; G. P. Li

doi:10.1016/j.ijleo.2016.05.025

Silicon LEDs toward high frequency on-chip link

Kaikai Xu, Lukas W. Snyman, Jean Luc Polleux, Kingsley A. Ogudo, Carlos Viana, Qi Yu, G. P. Li

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this paper, the emission of visible light (400-900 nm) by a monolithically integrated silicon p-n junction under reverse bias is presented. It is theoretically deducted that these Si-LEDs can operate in GHz range and provide reliable operation. The modulation of Si-LED is verified using the existing two-dimensional (2-D) models to simulate the vertical and lateral fields. With the help of Monte Carlo and Rsoft BeamPROP simulations, the vertical emission, focusing, refraction, splitting and wave-guiding are optimized in standard CMOS technology at 750 nm wavelength. Since the Si-LEDs, waveguides, and Si-photo-detector can be integrated on a single chip, a small micro-photonic system could be realized in the CMOS integrated circuitry standard platform.

Original language	English
Pages (from-to)	7002-7020
Number of pages	19
Journal	Optik
Volume	127
Issue number	17
DOIs	https://doi.org/10.1016/j.ijleo.2016.05.025
Publication status	Published - 1 Sept 2016
Externally published	Yes

Keywords

Electroluminescence
Semiconductor integrated optoelectronics
Silicon LED
Visible-light communication

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1016/j.ijleo.2016.05.025

Cite this

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title = "Silicon LEDs toward high frequency on-chip link",

abstract = "In this paper, the emission of visible light (400-900 nm) by a monolithically integrated silicon p-n junction under reverse bias is presented. It is theoretically deducted that these Si-LEDs can operate in GHz range and provide reliable operation. The modulation of Si-LED is verified using the existing two-dimensional (2-D) models to simulate the vertical and lateral fields. With the help of Monte Carlo and Rsoft BeamPROP simulations, the vertical emission, focusing, refraction, splitting and wave-guiding are optimized in standard CMOS technology at 750 nm wavelength. Since the Si-LEDs, waveguides, and Si-photo-detector can be integrated on a single chip, a small micro-photonic system could be realized in the CMOS integrated circuitry standard platform.",

keywords = "Electroluminescence, Semiconductor integrated optoelectronics, Silicon LED, Visible-light communication",

author = "Kaikai Xu and Snyman, \{Lukas W.\} and Polleux, \{Jean Luc\} and Ogudo, \{Kingsley A.\} and Carlos Viana and Qi Yu and Li, \{G. P.\}",

year = "2016",

month = sep,

day = "1",

doi = "10.1016/j.ijleo.2016.05.025",

language = "English",

volume = "127",

pages = "7002--7020",

journal = "Optik",

issn = "0030-4026",

publisher = "Elsevier GmbH",

number = "17",

}

TY - JOUR

T1 - Silicon LEDs toward high frequency on-chip link

AU - Xu, Kaikai

AU - Snyman, Lukas W.

AU - Polleux, Jean Luc

AU - Ogudo, Kingsley A.

AU - Viana, Carlos

AU - Yu, Qi

AU - Li, G. P.

PY - 2016/9/1

Y1 - 2016/9/1

N2 - In this paper, the emission of visible light (400-900 nm) by a monolithically integrated silicon p-n junction under reverse bias is presented. It is theoretically deducted that these Si-LEDs can operate in GHz range and provide reliable operation. The modulation of Si-LED is verified using the existing two-dimensional (2-D) models to simulate the vertical and lateral fields. With the help of Monte Carlo and Rsoft BeamPROP simulations, the vertical emission, focusing, refraction, splitting and wave-guiding are optimized in standard CMOS technology at 750 nm wavelength. Since the Si-LEDs, waveguides, and Si-photo-detector can be integrated on a single chip, a small micro-photonic system could be realized in the CMOS integrated circuitry standard platform.

AB - In this paper, the emission of visible light (400-900 nm) by a monolithically integrated silicon p-n junction under reverse bias is presented. It is theoretically deducted that these Si-LEDs can operate in GHz range and provide reliable operation. The modulation of Si-LED is verified using the existing two-dimensional (2-D) models to simulate the vertical and lateral fields. With the help of Monte Carlo and Rsoft BeamPROP simulations, the vertical emission, focusing, refraction, splitting and wave-guiding are optimized in standard CMOS technology at 750 nm wavelength. Since the Si-LEDs, waveguides, and Si-photo-detector can be integrated on a single chip, a small micro-photonic system could be realized in the CMOS integrated circuitry standard platform.

KW - Electroluminescence

KW - Semiconductor integrated optoelectronics

KW - Silicon LED

KW - Visible-light communication

UR - https://www.scopus.com/pages/publications/84968909112

U2 - 10.1016/j.ijleo.2016.05.025

DO - 10.1016/j.ijleo.2016.05.025

M3 - Article

AN - SCOPUS:84968909112

SN - 0030-4026

VL - 127

SP - 7002

EP - 7020

JO - Optik

JF - Optik

IS - 17

ER -

Silicon LEDs toward high frequency on-chip link

Abstract

Keywords

ASJC Scopus subject areas

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