Sensitivity of narrow- and wideband LNA performance to individual transistor model parameters

Marnus Weststrate, Anindya Mukherjee, Saurabh Sinha, Michael Schroter

Research output: Contribution to journalArticlepeer-review


Although it is desirable for a transistor model to be as accurate as possible, the extraction of model parameters from fabricated transistors is a time-consuming and often costly process. An investigation of the sensitivity of low-noise amplifier (LNA) performance characteristics to individual parameters of the physics-based standard HBT model HICUM/L2 was, therefore, done to gain a preliminary insight into the most important parameters for transistors used in actual circuits. This can potentially allow less strenuous accuracy requirements on some parameters which would ease the extraction process. Both a narrow- and wideband LNA configuration were investigated. It was found that the series resistance parameters have a large impact on LNA gain, S11 and noise figure performance in both cases. Since the narrow-band LNA relied heavily on the transistor characteristics to provide a proper matching, it was also very sensitive to changes in the parameters used in modelling the high-frequency current gain and depletion capacitances of the transistor.

Original languageEnglish
Pages (from-to)36-47
Number of pages12
JournalInternational Journal of Electronics
Issue number1
Publication statusPublished - 2013
Externally publishedYes


  • Inductive emitter degeneration
  • LC-ladder and capacitive feedback
  • Low-noise amplifier
  • Parameter variations
  • Sensitivity
  • Solid-state electronics devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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