Sensitivity of class-E power amplifier performance to individual transistor model parameters

J. Krause; H. Wittkopf; M. Schroter; S. Sinha; M. Weststrate

doi:10.1109/ISCDG.2013.6656300

Sensitivity of class-E power amplifier performance to individual transistor model parameters

J. Krause, H. Wittkopf, M. Schroter, S. Sinha, M. Weststrate

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The overall purpose of this paper is the investigation of the impact of individual transistor parameters on the most important class-E power amplifier performance characteristics. The very advanced and physics-based compact model HICUM/L2 v2.22 was used. The changes in power added efficiency and transducer power gain provide insight about how sensitive the circuit is to inaccuracies in model parameter determination. In order to cover possible correlations between model parameters, a statistical analysis using numerical device simulation was performed as well.

Original language	English
Title of host publication	2013 IEEE International Semiconductor Conference Dresden - Grenoble
Subtitle of host publication	Technology, Design, Packaging, Simulation and Test, ISCDG 2013
DOIs	https://doi.org/10.1109/ISCDG.2013.6656300
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013 - Dresden, Germany Duration: 26 Sept 2013 → 27 Sept 2013

Publication series

Name	2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013

Conference

Conference	2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013
Country/Territory	Germany
City	Dresden
Period	26/09/13 → 27/09/13

Keywords

HICUM
class-E power amplifier
parameter variations
semiconductor device modelling

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISCDG.2013.6656300

Cite this

Krause, J., Wittkopf, H., Schroter, M., Sinha, S., & Weststrate, M. (2013). Sensitivity of class-E power amplifier performance to individual transistor model parameters. In 2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013 Article 6656300 (2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013). https://doi.org/10.1109/ISCDG.2013.6656300

Krause, J. ; Wittkopf, H. ; Schroter, M. et al. / Sensitivity of class-E power amplifier performance to individual transistor model parameters. 2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013. 2013. (2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013).

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title = "Sensitivity of class-E power amplifier performance to individual transistor model parameters",

abstract = "The overall purpose of this paper is the investigation of the impact of individual transistor parameters on the most important class-E power amplifier performance characteristics. The very advanced and physics-based compact model HICUM/L2 v2.22 was used. The changes in power added efficiency and transducer power gain provide insight about how sensitive the circuit is to inaccuracies in model parameter determination. In order to cover possible correlations between model parameters, a statistical analysis using numerical device simulation was performed as well.",

keywords = "HICUM, class-E power amplifier, parameter variations, semiconductor device modelling",

author = "J. Krause and H. Wittkopf and M. Schroter and S. Sinha and M. Weststrate",

year = "2013",

doi = "10.1109/ISCDG.2013.6656300",

language = "English",

isbn = "9781479912506",

series = "2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013",

booktitle = "2013 IEEE International Semiconductor Conference Dresden - Grenoble",

note = "2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013 ; Conference date: 26-09-2013 Through 27-09-2013",

}

Krause, J, Wittkopf, H, Schroter, M, Sinha, S & Weststrate, M 2013, Sensitivity of class-E power amplifier performance to individual transistor model parameters. in 2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013., 6656300, 2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013, 2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013, Dresden, Germany, 26/09/13. https://doi.org/10.1109/ISCDG.2013.6656300

Sensitivity of class-E power amplifier performance to individual transistor model parameters. / Krause, J.; Wittkopf, H.; Schroter, M. et al.
2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013. 2013. 6656300 (2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Weststrate, M.

PY - 2013

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AB - The overall purpose of this paper is the investigation of the impact of individual transistor parameters on the most important class-E power amplifier performance characteristics. The very advanced and physics-based compact model HICUM/L2 v2.22 was used. The changes in power added efficiency and transducer power gain provide insight about how sensitive the circuit is to inaccuracies in model parameter determination. In order to cover possible correlations between model parameters, a statistical analysis using numerical device simulation was performed as well.

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Krause J, Wittkopf H, Schroter M, Sinha S, Weststrate M. Sensitivity of class-E power amplifier performance to individual transistor model parameters. In 2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013. 2013. 6656300. (2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013). doi: 10.1109/ISCDG.2013.6656300

Sensitivity of class-E power amplifier performance to individual transistor model parameters

Abstract

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Keywords

ASJC Scopus subject areas

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