Role of Ga particulates on the structure and optical properties of Y3(Al,Ga)5O12:Tb thin films prepared by PLD

A. Yousif; M. M. Duvenhage; O. M. Ntwaeaborwa; H. C. Swart

doi:10.1016/j.physb.2017.08.015

Role of Ga particulates on the structure and optical properties of Y₃(Al,Ga)₅O₁₂:Tb thin films prepared by PLD

A. Yousif, M. M. Duvenhage, O. M. Ntwaeaborwa, H. C. Swart

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Y₃(Al,Ga)₅O₁₂:Tb thin films (70 nm) have been prepared by pulsed laser deposition on a Si (100) substrate at the substrate temperature of 300 °C. The effect of annealing time on the structural, morphological and luminescence properties of Y₃(Al,Ga)₅O₁₂:Tb thin films at 800 °C were studied. The crystal structure of the samples was studied by X- ray diffraction (XRD) and showed shifts in the peak positions to lower diffraction angles for the annealed film compared to the XRD peak positions of the commercial Y₃(Al,Ga)₅O₁₂:Tb powder. A new excitation band different from the original Y₃(Al,Ga)₅O₁₂:Tb powder was also observed for the annealed films. The shift in the XRD pattern and the new excitation band for the annealed film suggested that the films were enriched with Ga after annealing.

Original language	English
Pages (from-to)	319-322
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	535
DOIs	https://doi.org/10.1016/j.physb.2017.08.015
Publication status	Published - 15 Apr 2018
Externally published	Yes

Keywords

Diffusion
Ga particles
Ga)O:Tb thin films
Luminescence
PLD
Y(Al

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2017.08.015

Cite this

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title = "Role of Ga particulates on the structure and optical properties of Y3(Al,Ga)5O12:Tb thin films prepared by PLD",

abstract = "Y3(Al,Ga)5O12:Tb thin films (70 nm) have been prepared by pulsed laser deposition on a Si (100) substrate at the substrate temperature of 300 °C. The effect of annealing time on the structural, morphological and luminescence properties of Y3(Al,Ga)5O12:Tb thin films at 800 °C were studied. The crystal structure of the samples was studied by X- ray diffraction (XRD) and showed shifts in the peak positions to lower diffraction angles for the annealed film compared to the XRD peak positions of the commercial Y3(Al,Ga)5O12:Tb powder. A new excitation band different from the original Y3(Al,Ga)5O12:Tb powder was also observed for the annealed films. The shift in the XRD pattern and the new excitation band for the annealed film suggested that the films were enriched with Ga after annealing.",

keywords = "Diffusion, Ga particles, Ga)O:Tb thin films, Luminescence, PLD, Y(Al",

author = "A. Yousif and Duvenhage, {M. M.} and Ntwaeaborwa, {O. M.} and Swart, {H. C.}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

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day = "15",

doi = "10.1016/j.physb.2017.08.015",

language = "English",

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T1 - Role of Ga particulates on the structure and optical properties of Y3(Al,Ga)5O12:Tb thin films prepared by PLD

AU - Yousif, A.

AU - Duvenhage, M. M.

AU - Ntwaeaborwa, O. M.

AU - Swart, H. C.

PY - 2018/4/15

Y1 - 2018/4/15

N2 - Y3(Al,Ga)5O12:Tb thin films (70 nm) have been prepared by pulsed laser deposition on a Si (100) substrate at the substrate temperature of 300 °C. The effect of annealing time on the structural, morphological and luminescence properties of Y3(Al,Ga)5O12:Tb thin films at 800 °C were studied. The crystal structure of the samples was studied by X- ray diffraction (XRD) and showed shifts in the peak positions to lower diffraction angles for the annealed film compared to the XRD peak positions of the commercial Y3(Al,Ga)5O12:Tb powder. A new excitation band different from the original Y3(Al,Ga)5O12:Tb powder was also observed for the annealed films. The shift in the XRD pattern and the new excitation band for the annealed film suggested that the films were enriched with Ga after annealing.

AB - Y3(Al,Ga)5O12:Tb thin films (70 nm) have been prepared by pulsed laser deposition on a Si (100) substrate at the substrate temperature of 300 °C. The effect of annealing time on the structural, morphological and luminescence properties of Y3(Al,Ga)5O12:Tb thin films at 800 °C were studied. The crystal structure of the samples was studied by X- ray diffraction (XRD) and showed shifts in the peak positions to lower diffraction angles for the annealed film compared to the XRD peak positions of the commercial Y3(Al,Ga)5O12:Tb powder. A new excitation band different from the original Y3(Al,Ga)5O12:Tb powder was also observed for the annealed films. The shift in the XRD pattern and the new excitation band for the annealed film suggested that the films were enriched with Ga after annealing.

KW - Diffusion

KW - Ga particles

KW - Ga)O:Tb thin films

KW - Luminescence

KW - PLD

KW - Y(Al

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DO - 10.1016/j.physb.2017.08.015

M3 - Article

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SN - 0921-4526

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SP - 319

EP - 322

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

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