Resistive switching of carbon nitride supported ultra-fine lead sulfide based device: Implementation of a 8-bit memristor

Resistive switching refers to a physical phenomenon where dielectric materials suddenly change their resistance under the action of an electric field. Here, a high temperature in-situ route was implemented to synthesis of lead sulfide nanoparticles, embedded on the carbon nitride matrix, CNLS, that exhibited bipolar resistive switching (BRS) property. The electron transport property of the device, made with the hybrid system (CNLS), was explained by Poole-Frenkel (PF) emission and Ohmic mechanism for the low conductance state (LCS) and high conductance state (HCS), respectively. The stability and nonvolatile performance of the low and high conductance states were examined and the device showed an average ON-OFF ratio in the order of 4 × 10⁵. The Write-Read (1)-Erase-Read (0) cycle revealed a moderately good resolution between 2-Read operations (R₀ & R₁) for the CNLS based device. A 8-bit memory device made with the title material that successfully stored, process and recovered the binary information.