Resistive switching characteristics of carbon nitride supported manganese oxysulfide: an evidence for the sweep dependent transformation of polarity

Venkata K. Perla; Sarit K. Ghosh; Kaushik Mallick

doi:10.1038/s41598-020-71313-2

Resistive switching characteristics of carbon nitride supported manganese oxysulfide: an evidence for the sweep dependent transformation of polarity

Venkata K. Perla, Sarit K. Ghosh, Kaushik Mallick

Chemical Sciences

University of Johannesburg

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

As part of a program to investigate the materials for resistive random access memory (ReRam) applications, a study has been conducted using embedded manganese oxysulfide (MOS) nanoparticles on the thin film of carbon nitride (CN). A high-temperature in-situ route was employed to synthesis CN-MOS composite where thiourea and manganese chloride was used as the precursor. The electrical property of the CN-MOS composite system (active layer), sandwiched between two gold electrodes, was measured under different sweeping (voltage) conditions. The device displayed different types of switching patterns, unipolar, and bipolar, by changing the sweep direction. The CN-MOS based device also exhibited good endurance and memory retention performances for the period of 10⁴ cycles and 10⁴ s, respectively, for both the polarities.

Original language	English
Article number	14319
Journal	Scientific Reports
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41598-020-71313-2
Publication status	Published - 1 Dec 2020

ASJC Scopus subject areas

Multidisciplinary

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title = "Resistive switching characteristics of carbon nitride supported manganese oxysulfide: an evidence for the sweep dependent transformation of polarity",

abstract = "As part of a program to investigate the materials for resistive random access memory (ReRam) applications, a study has been conducted using embedded manganese oxysulfide (MOS) nanoparticles on the thin film of carbon nitride (CN). A high-temperature in-situ route was employed to synthesis CN-MOS composite where thiourea and manganese chloride was used as the precursor. The electrical property of the CN-MOS composite system (active layer), sandwiched between two gold electrodes, was measured under different sweeping (voltage) conditions. The device displayed different types of switching patterns, unipolar, and bipolar, by changing the sweep direction. The CN-MOS based device also exhibited good endurance and memory retention performances for the period of 104 cycles and 104 s, respectively, for both the polarities.",

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Resistive switching characteristics of carbon nitride supported manganese oxysulfide: an evidence for the sweep dependent transformation of polarity

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