Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology

Si Avalanche based LEDs technology has been developed in the 650 -850nm wavelength regime^1,2. Correspondingly, small micro-dimensioned detectors with pW/Iμm² sensitivity have been developed for the same wavelength range utilizing Si-Ge detector technology with detection efficiencies of up to 0.85, and with a transition frequencies of up to 80 GHz [3] A series of on-chip optical links of 50 micron length, utilizing 650 - 850 nm propagation wavelength have been designed and realized, utilizing a Si Ge radio frequency bipolar process. Micron dimensioned optical sources, waveguides and detectors were all integrated on the same chip to form a complete optical link on-chip. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art Si-Ge bipolar detector technologies were used as key design strategies. Best performances show optical coupling from source to detector of up to 10GHz and - 40dBm total optical link budget loss with a potential transition frequency coupling of up to 40GHz utilizing Si Ge based LEDs. The technology is particularly suitable for application as on-chip optical links, optical MEMS and MOEMS, as well as for optical interconnects utilizing low loss, side surface, waveguide- to-optical fiber coupling. Most particularly is one of our designed waveguide which have a good core axis alignment with the optical source and yield 10GHz -30dB on-chip micro-optical links as shown in Fig 9 (c). The technology as developed has been appropriately IP protected..