Pressure-induced metallization of ZnSe

Galit Itkin; Giovanni R. Hearne; Eran Sterer; Moshe P. Pasternak; Walter Potzel

doi:10.1103/PhysRevB.51.3195

Pressure-induced metallization of ZnSe

Galit Itkin, Giovanni R. Hearne, Eran Sterer, Moshe P. Pasternak, Walter Potzel

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

High-pressure studies of the resistivity R of the direct-gap insulator ZnSe were carried out using diamond-anvil cells. The pressure dependence R(P) at 300 K in the pressure range of 020 GPa revealed a drastic drop in the resistance at P=13.5 GPa and upon decompression recovery of the insulating state at 10.5 GPa. From the temperature dependence of the resistance at P>13.5 GPa it has been concluded that (i) narrow-gap semiconducting and metallic phases coexist in the range 13.515 GPa, and (ii) a pure metallic state, characterized by a positive temperature slope and small resistivity value, exists at P>17 GPa. The results are discussed in terms of previous optical data and band-structure calculations.

Original language	English
Pages (from-to)	3195-3197
Number of pages	3
Journal	Physical Review B
Volume	51
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevB.51.3195
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.51.3195

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title = "Pressure-induced metallization of ZnSe",

abstract = "High-pressure studies of the resistivity R of the direct-gap insulator ZnSe were carried out using diamond-anvil cells. The pressure dependence R(P) at 300 K in the pressure range of 020 GPa revealed a drastic drop in the resistance at P=13.5 GPa and upon decompression recovery of the insulating state at 10.5 GPa. From the temperature dependence of the resistance at P>13.5 GPa it has been concluded that (i) narrow-gap semiconducting and metallic phases coexist in the range 13.515 GPa, and (ii) a pure metallic state, characterized by a positive temperature slope and small resistivity value, exists at P>17 GPa. The results are discussed in terms of previous optical data and band-structure calculations.",

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T1 - Pressure-induced metallization of ZnSe

AU - Itkin, Galit

AU - Hearne, Giovanni R.

AU - Sterer, Eran

AU - Pasternak, Moshe P.

AU - Potzel, Walter

PY - 1995

Y1 - 1995

N2 - High-pressure studies of the resistivity R of the direct-gap insulator ZnSe were carried out using diamond-anvil cells. The pressure dependence R(P) at 300 K in the pressure range of 020 GPa revealed a drastic drop in the resistance at P=13.5 GPa and upon decompression recovery of the insulating state at 10.5 GPa. From the temperature dependence of the resistance at P>13.5 GPa it has been concluded that (i) narrow-gap semiconducting and metallic phases coexist in the range 13.515 GPa, and (ii) a pure metallic state, characterized by a positive temperature slope and small resistivity value, exists at P>17 GPa. The results are discussed in terms of previous optical data and band-structure calculations.

AB - High-pressure studies of the resistivity R of the direct-gap insulator ZnSe were carried out using diamond-anvil cells. The pressure dependence R(P) at 300 K in the pressure range of 020 GPa revealed a drastic drop in the resistance at P=13.5 GPa and upon decompression recovery of the insulating state at 10.5 GPa. From the temperature dependence of the resistance at P>13.5 GPa it has been concluded that (i) narrow-gap semiconducting and metallic phases coexist in the range 13.515 GPa, and (ii) a pure metallic state, characterized by a positive temperature slope and small resistivity value, exists at P>17 GPa. The results are discussed in terms of previous optical data and band-structure calculations.

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DO - 10.1103/PhysRevB.51.3195

M3 - Article

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VL - 51

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JO - Physical Review B

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Pressure-induced metallization of ZnSe

Abstract

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