Abstract
The effect of pressure on the electronic and magnetic properties of the antiferromagnetic (T N∼43 K) narrow gap semiconductor UNiSn has been investigated by 119Sn Mössbauer spectroscopy and nuclear forward scattering of synchrotron radiation, electrical resistance, and x-ray diffraction. We show that the decrease of the semiconducting gap which leads to a metallic state at p∼9 GPa is associated with an enhancement of T N. At higher pressures, both TN and the transferred magnetic hyperfine field decrease, with a collapse of magnetism at ∼18.5 GPa. The results are explained by a volume-dependent competition between indirect Ruderman-Kittel-Kasuya-Yosida interaction and the 5f-ligand hybridization.
Original language | English |
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Article number | 020402 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 71 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jan 2005 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics