@inproceedings{4d6cd61fc56741aa836c07d73c55a541,
title = "Precise control of precursor sticking coefficient on substrates with large aspect ratios in ALD",
abstract = "In this paper, the Atomic Layer Deposition (ALD) process in the reactor scale was simulated using ANSYS{\textregistered} Fluent{\textregistered} 19.1 and ChemKin-PRO commercial packages in order to solve transport and chemistry equations. Trenched substrates with large aspect ratios (AR) of 33 ≤ AR ≤ 300, at a reactor scale of an ALD process, were considered a temperature of 473K and 573K. Trimethlyaluminum (TMA) and Ozone reactants were used to formulate a precise Sticking Coefficients (SC) for a satisfactory dose (precursor exposure level) in order to deposit conforming Al2O3 films. The estimated error in the empirical correlation of SCs was determined and compared to published experimental data. An empirical correlation based on simulated models was derived. This correlation can be exploited to determine precise precursor exposure levels for an ALD process irrespective of the type of reactor used.",
keywords = "Aspect Ratios, Atomic Layer Deposition, Sticking Coefficient",
author = "Kunene, {T. J.} and L. Tartibu and Jen, {T. C.}",
note = "Publisher Copyright: Copyright {\textcopyright} 2019 ASME.; ASME 2019 International Mechanical Engineering Congress and Exposition, IMECE 2019 ; Conference date: 11-11-2019 Through 14-11-2019",
year = "2019",
doi = "10.1115/IMECE2019-11152",
language = "English",
series = "ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)",
publisher = "American Society of Mechanical Engineers (ASME)",
booktitle = "Advanced Materials",
}