Post-fabrication annealing effects on the performance of P3HT:PCBM solar cells with/without ZnO nanoparticles

O. M. Ntwaeaborwa, Renjia Zhou, Lei Qian, Shreyas S. Pitale, J. Xue, H. C. Swart, P. H. Holloway

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


In this study, P3HT:PCBM organic photovoltaic (OPV) devices, with or without ZnO nanoparticles buffer layer between the photoactive layer (P3HT:PCBM) and the cathode (Al top electrode), were fabricated. The devices were annealed at 145°C either before or after depositing the top electrode. The objective of this study was to investigate the effects of the ZnO buffer layer and pre-/post-fabrication annealing on the general performance of these devices. The short-circuit current density (J SC), open-circuit voltage (V OC) and the external quantum efficiency (EQE) of the OPV devices were improved by the insertion of the ZnO layer and post-fabrication annealing. The post-fabrication annealed devices, with or without the ZnO layer, exhibited higher values of J SC, V OC and EQE than those of similar devices annealed before depositing the Al metal. This can be attributed to, among other things, improved charge transport across the interface between the photoactive layer and the Al top electrode as a result of post-annealing induced modification of the interface morphology.

Original languageEnglish
Pages (from-to)1631-1633
Number of pages3
JournalPhysica B: Condensed Matter
Issue number10
Publication statusPublished - 15 May 2012
Externally publishedYes


  • Carriers
  • Heterojunction
  • Organic
  • Photovoltaic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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