Abstract
The compound U2Ru2Sn is known to crystallize in the tetragonal U3Si2-type structure and is believed to be a weak paramagnet. We report electrical resistivity studies on this compound which seem to indicate semiconducting behaviour at low temperatures and hence a gap formation in this compound. This is evidenced from a sharp rise in the resistivity seen at low temperatures similar to that observed in the so-called Kondo insulators.
| Original language | English |
|---|---|
| Pages (from-to) | 519-521 |
| Number of pages | 3 |
| Journal | Solid State Communications |
| Volume | 106 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - May 1998 |
| Externally published | Yes |
Keywords
- D. Kondo effects
- D. electronic transport
- D. valence fluctuations
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry