Abstract
The compound U2Ru2Sn is known to crystallize in the tetragonal U3Si2-type structure and is believed to be a weak paramagnet. We report electrical resistivity studies on this compound which seem to indicate semiconducting behaviour at low temperatures and hence a gap formation in this compound. This is evidenced from a sharp rise in the resistivity seen at low temperatures similar to that observed in the so-called Kondo insulators.
Original language | English |
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Pages (from-to) | 519-521 |
Number of pages | 3 |
Journal | Solid State Communications |
Volume | 106 |
Issue number | 8 |
DOIs | |
Publication status | Published - May 1998 |
Externally published | Yes |
Keywords
- D. Kondo effects
- D. electronic transport
- D. valence fluctuations
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry