Photoluminescence properties of Y3(Al,Ga)5O 12:Ce3+ thin phosphor films grown by pulsed laser deposition

S. T.S. Dlamini; H. C. Swart; O. M. Ntwaeaborwa

doi:10.1016/j.physb.2013.11.050

Photoluminescence properties of Y₃(Al,Ga)₅O ₁₂:Ce³⁺ thin phosphor films grown by pulsed laser deposition

S. T.S. Dlamini, H. C. Swart, O. M. Ntwaeaborwa

University of The Free State

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Photoluminescence (PL) properties of Y₃(Al,Ga)₅O ₁₂:Ce³⁺ (YAGG:Ce) thin phosphor films prepared by the pulsed laser deposition technique were investigated. The films were deposited on SiO₂/Si(1 0 0) substrates using different substrate temperatures in a vacuum chamber backfilled with either O₂ or Ar gas. The maximum PL intensity was obtained from the film deposited at the substrate temperature of 300 C in an O₂ atmosphere. In addition, the films with well-defined grains (rougher surfaces) showed higher PL intensity compared to films with poorly-defined grains (smooth surfaces) as confirmed from the atomic force microscopy data. A slight shift in the wavelength of the PL spectra was observed from the thin films when compared to the PL spectra of the phosphor in powder form which is probably due to a change in the crystal field.

Original language	English
Pages (from-to)	88-92
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	439
DOIs	https://doi.org/10.1016/j.physb.2013.11.050
Publication status	Published - 15 Apr 2014
Externally published	Yes

Keywords

Different gas atmospheres
Photoluminescence
Pulsed laser deposition
Y(Al,Ga)O:Ce

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2013.11.050

Cite this

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title = "Photoluminescence properties of Y3(Al,Ga)5O 12:Ce3+ thin phosphor films grown by pulsed laser deposition",

abstract = "Photoluminescence (PL) properties of Y3(Al,Ga)5O 12:Ce3+ (YAGG:Ce) thin phosphor films prepared by the pulsed laser deposition technique were investigated. The films were deposited on SiO2/Si(1 0 0) substrates using different substrate temperatures in a vacuum chamber backfilled with either O2 or Ar gas. The maximum PL intensity was obtained from the film deposited at the substrate temperature of 300 C in an O2 atmosphere. In addition, the films with well-defined grains (rougher surfaces) showed higher PL intensity compared to films with poorly-defined grains (smooth surfaces) as confirmed from the atomic force microscopy data. A slight shift in the wavelength of the PL spectra was observed from the thin films when compared to the PL spectra of the phosphor in powder form which is probably due to a change in the crystal field.",

keywords = "Different gas atmospheres, Photoluminescence, Pulsed laser deposition, Y(Al,Ga)O:Ce",

author = "Dlamini, {S. T.S.} and Swart, {H. C.} and Ntwaeaborwa, {O. M.}",

year = "2014",

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T1 - Photoluminescence properties of Y3(Al,Ga)5O 12:Ce3+ thin phosphor films grown by pulsed laser deposition

AU - Dlamini, S. T.S.

AU - Swart, H. C.

AU - Ntwaeaborwa, O. M.

PY - 2014/4/15

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N2 - Photoluminescence (PL) properties of Y3(Al,Ga)5O 12:Ce3+ (YAGG:Ce) thin phosphor films prepared by the pulsed laser deposition technique were investigated. The films were deposited on SiO2/Si(1 0 0) substrates using different substrate temperatures in a vacuum chamber backfilled with either O2 or Ar gas. The maximum PL intensity was obtained from the film deposited at the substrate temperature of 300 C in an O2 atmosphere. In addition, the films with well-defined grains (rougher surfaces) showed higher PL intensity compared to films with poorly-defined grains (smooth surfaces) as confirmed from the atomic force microscopy data. A slight shift in the wavelength of the PL spectra was observed from the thin films when compared to the PL spectra of the phosphor in powder form which is probably due to a change in the crystal field.

AB - Photoluminescence (PL) properties of Y3(Al,Ga)5O 12:Ce3+ (YAGG:Ce) thin phosphor films prepared by the pulsed laser deposition technique were investigated. The films were deposited on SiO2/Si(1 0 0) substrates using different substrate temperatures in a vacuum chamber backfilled with either O2 or Ar gas. The maximum PL intensity was obtained from the film deposited at the substrate temperature of 300 C in an O2 atmosphere. In addition, the films with well-defined grains (rougher surfaces) showed higher PL intensity compared to films with poorly-defined grains (smooth surfaces) as confirmed from the atomic force microscopy data. A slight shift in the wavelength of the PL spectra was observed from the thin films when compared to the PL spectra of the phosphor in powder form which is probably due to a change in the crystal field.

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