TY - GEN
T1 - Phase noise analysis of a tail-current shaping technique employed on a BiCMOS voltage controlled oscillator
AU - Lambrechts, J. W.
AU - Sinha, S.
PY - 2010
Y1 - 2010
N2 - A BiCMOS Silicon Germanium cross-coupled differential-pair narrowband voltage controlled oscillator with a tail-current shaping technique to improve phase noise performance is implemented and experimental results are presented. Several VCOs are fabricated on-chip to serve for a practical comparison and the results are also compared to simulated results. Simulation results provided a 3.3 dBc/Hz improvement from -105.3 dBc/Hz to -108.6 dBc/Hz at a 1 MHz offset frequency from the 5 GHz carrier. Measured results confirm the correlation of phase noise performance between simulation and prototype. Acceptable phase noise performance compared to previous works is achieved using a relatively cost-effective technology.
AB - A BiCMOS Silicon Germanium cross-coupled differential-pair narrowband voltage controlled oscillator with a tail-current shaping technique to improve phase noise performance is implemented and experimental results are presented. Several VCOs are fabricated on-chip to serve for a practical comparison and the results are also compared to simulated results. Simulation results provided a 3.3 dBc/Hz improvement from -105.3 dBc/Hz to -108.6 dBc/Hz at a 1 MHz offset frequency from the 5 GHz carrier. Measured results confirm the correlation of phase noise performance between simulation and prototype. Acceptable phase noise performance compared to previous works is achieved using a relatively cost-effective technology.
KW - Active circuit
KW - Analogue integrated circuit (IC)
KW - Bipolar CMOS (BiCMOS)
KW - Heterojunction bipolar transistor (HBT)
KW - LC oscillator
KW - Narrowband
KW - Silicon Germanium (SiGe)
KW - Single sideband (SSB)
KW - Voltage controlled oscillator (VCO)
UR - http://www.scopus.com/inward/record.url?scp=78651109814&partnerID=8YFLogxK
U2 - 10.1109/SMICND.2010.5650476
DO - 10.1109/SMICND.2010.5650476
M3 - Conference contribution
AN - SCOPUS:78651109814
SN - 9781424457816
T3 - Proceedings of the International Semiconductor Conference, CAS
SP - 509
EP - 512
BT - 2010 33rd International Semiconductor Conference, CAS 2010 - Proceedings
T2 - 2010 33rd International Semiconductor Conference, CAS 2010
Y2 - 11 October 2010 through 13 October 2010
ER -