Abstract
The scaling of the solid-state devices are reaching its limit and it enhances the significant short channel effects. To overcome these problems, the surrounding-gate MOSFET is emerging as a promising structure and is a replacement of traditional MOSFETs. In this research work, authors have analyzed the performance of various parameters for the cylindrical surrounding-gate MOSFET using surface potential based approach and further transformation of variable technique to find the solution of the same differential equation. However, the modeling of terminal charge and trans-capacitance are also presented which is used for the circuit simulation. The influence of Gaussian doping (in vertical direction across the radius of the device) has been analyzed and solution of the surface-potential is derived based on the taylor series expansion.
| Original language | English |
|---|---|
| Pages (from-to) | 66-75 |
| Number of pages | 10 |
| Journal | Microelectronics Journal |
| Volume | 57 |
| DOIs | |
| Publication status | Published - 1 Nov 2016 |
| Externally published | Yes |
Keywords
- Cylindrical surrounding-gate MOSFET
- Double-gate MOSFET
- Gaussian doping
- Microelectronics
- Short channel effect
- Surface potential
- VLSI
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering