TY - GEN
T1 - Parameter extraction from I-V characteristics of PV devices
AU - Macabebe, Erees Queen B.
AU - Sheppard, Charles J.
AU - Ernest Van Dyk, E.
PY - 2009/1/1
Y1 - 2009/1/1
N2 - Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S)2- and Cu(In,Ga)(Se,S)2-based solar cells, as well as, CuInSe2, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S)2- and Cu(In,Ga)(Se,S)2-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance.
AB - Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S)2- and Cu(In,Ga)(Se,S)2-based solar cells, as well as, CuInSe2, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S)2- and Cu(In,Ga)(Se,S)2-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance.
KW - Device parameters
KW - Module performance
KW - PSO
KW - PV modules
KW - Parameter extraction
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=84873847669&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84873847669
SN - 9781617388521
T3 - 29th ISES Biennial Solar World Congress 2009, ISES 2009
SP - 1149
EP - 1155
BT - 29th ISES Biennial Solar World Congress 2009, ISES 2009
PB - International Solar Energy Society
T2 - 29th Biennial Solar World Congress of the International Solar Energy Society, ISES 2009
Y2 - 11 October 2009 through 14 October 2009
ER -
