Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)

Hong Hee Kim; David O. Kumi; Kiwoong Kim; Donghee Park; Yeonjin Yi; So Hye Cho; Cheolmin Park; O. M. Ntwaeaborwa; Won Kook Choi

doi:10.1039/c9ra06976c

Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)

Hong Hee Kim, David O. Kumi, Kiwoong Kim, Donghee Park, Yeonjin Yi, So Hye Cho, Cheolmin Park, O. M. Ntwaeaborwa, Won Kook Choi

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (L_max) and maximum luminance efficiency (LE_max) of QD-LEDs based on ZnGaMgO NPs reached 43440 cd m^-2 and 15.4 cd A^-1. These results increased by 34%, 10% and 27% for the L_max and 450%, 88%, and 208% for the LE_max when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs.

Original language	English
Pages (from-to)	32066-32071
Number of pages	6
Journal	RSC Advances
Volume	9
Issue number	55
DOIs	https://doi.org/10.1039/c9ra06976c
Publication status	Published - 2019
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering

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10.1039/c9ra06976c

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title = "Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)",

abstract = "In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (Lmax) and maximum luminance efficiency (LEmax) of QD-LEDs based on ZnGaMgO NPs reached 43440 cd m-2 and 15.4 cd A-1. These results increased by 34%, 10% and 27% for the Lmax and 450%, 88%, and 208% for the LEmax when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs.",

author = "Kim, {Hong Hee} and Kumi, {David O.} and Kiwoong Kim and Donghee Park and Yeonjin Yi and Cho, {So Hye} and Cheolmin Park and Ntwaeaborwa, {O. M.} and Choi, {Won Kook}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2019.",

year = "2019",

doi = "10.1039/c9ra06976c",

language = "English",

volume = "9",

pages = "32066--32071",

journal = "RSC Advances",

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TY - JOUR

T1 - Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)

AU - Kim, Hong Hee

AU - Kumi, David O.

AU - Kim, Kiwoong

AU - Park, Donghee

AU - Yi, Yeonjin

AU - Cho, So Hye

AU - Park, Cheolmin

AU - Ntwaeaborwa, O. M.

AU - Choi, Won Kook

PY - 2019

Y1 - 2019

N2 - In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (Lmax) and maximum luminance efficiency (LEmax) of QD-LEDs based on ZnGaMgO NPs reached 43440 cd m-2 and 15.4 cd A-1. These results increased by 34%, 10% and 27% for the Lmax and 450%, 88%, and 208% for the LEmax when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs.

AB - In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (Lmax) and maximum luminance efficiency (LEmax) of QD-LEDs based on ZnGaMgO NPs reached 43440 cd m-2 and 15.4 cd A-1. These results increased by 34%, 10% and 27% for the Lmax and 450%, 88%, and 208% for the LEmax when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs.

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DO - 10.1039/c9ra06976c

M3 - Article

AN - SCOPUS:85073382700

SN - 2046-2069

VL - 9

SP - 32066

EP - 32071

JO - RSC Advances

JF - RSC Advances

IS - 55

ER -

Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)

Abstract

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