Noise reduction by pixel circuit optimization in 4-T pixel structure detectors using integrated circuit technologies

Johan Venter, Saurabh Sinha

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

The most commonly used pixel structure in integrated circuit technologies is the three-transistor pixel structure (3-T). This structure consists of a pixel, a reset transistor, a source follower and a pixel select transistor. An extension to this is the 4-T pixel structure where an extra transistor is included to enable current steering in the readout phase and reset phase. This greatly reduces current consumption compared to the conventional 3-T pixel structure. Simulation results depicting this optimization is provided to support the technical contribution of this paper.

Original languageEnglish
Title of host publication2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479974733
DOIs
Publication statusPublished - 17 Dec 2015
EventIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 - Tel-Aviv, Israel
Duration: 2 Nov 20154 Nov 2015

Publication series

Name2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015

Conference

ConferenceIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
Country/TerritoryIsrael
CityTel-Aviv
Period2/11/154/11/15

Keywords

  • Active pixel sensors
  • CMOS technology
  • current
  • dark current
  • photonic integrated circuits
  • threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Networks and Communications
  • Radiation

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