Muon spin relaxation in synthetic type IIa diamond grown by high-pressure and high-temperature (HPHT) synthesis

M. Madhuku; D. Gxawu; S. H. Connell; I. Z. Machi; J. M. Keartland; P. J.C. King

doi:10.1016/j.physb.2009.08.038

Muon spin relaxation in synthetic type IIa diamond grown by high-pressure and high-temperature (HPHT) synthesis

M. Madhuku, D. Gxawu, S. H. Connell, I. Z. Machi, J. M. Keartland, P. J.C. King

Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The behaviour of hydrogen in the low strain pure diamond material synthesized by the high pressure high temperature (HPHT) route has been studied using the longitudinal field muon spin relaxation technique (LF - μ SR). This study almost completes a survey of muonium in diamond with a range of defect compositions. The result may provide information on the so-called missing fraction (MF) observed in many previous studies of muons implanted into semiconductors. The experimental results showed the existence of a diamagnetic muon state (μ⁺), two paramagnetic muonium states (tetrahedral interstitial (Mu_T⁰) and bond-centred (Mu_BC⁰)), and MF formed by positive muons implanted into the sample. The absolute fractions of μ⁺, Mu_T⁰, Mu_BC⁰ and MF in the sample were 4%, 54%, 30% and 12%, respectively.

Original language	English
Pages (from-to)	41-44
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	405
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2009.08.038
Publication status	Published - 1 Jan 2010

Keywords

Diamond properties and applications
HPHT single crystal diamond
Hydrogen
Muon spin relaxation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2009.08.038

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title = "Muon spin relaxation in synthetic type IIa diamond grown by high-pressure and high-temperature (HPHT) synthesis",

abstract = "The behaviour of hydrogen in the low strain pure diamond material synthesized by the high pressure high temperature (HPHT) route has been studied using the longitudinal field muon spin relaxation technique (LF - μ SR). This study almost completes a survey of muonium in diamond with a range of defect compositions. The result may provide information on the so-called missing fraction (MF) observed in many previous studies of muons implanted into semiconductors. The experimental results showed the existence of a diamagnetic muon state (μ+), two paramagnetic muonium states (tetrahedral interstitial (MuT0) and bond-centred (MuBC0)), and MF formed by positive muons implanted into the sample. The absolute fractions of μ+, MuT0, MuBC0 and MF in the sample were 4%, 54%, 30% and 12%, respectively.",

keywords = "Diamond properties and applications, HPHT single crystal diamond, Hydrogen, Muon spin relaxation",

author = "M. Madhuku and D. Gxawu and Connell, {S. H.} and Machi, {I. Z.} and Keartland, {J. M.} and King, {P. J.C.}",

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doi = "10.1016/j.physb.2009.08.038",

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T1 - Muon spin relaxation in synthetic type IIa diamond grown by high-pressure and high-temperature (HPHT) synthesis

AU - Madhuku, M.

AU - Gxawu, D.

AU - Connell, S. H.

AU - Machi, I. Z.

AU - Keartland, J. M.

AU - King, P. J.C.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The behaviour of hydrogen in the low strain pure diamond material synthesized by the high pressure high temperature (HPHT) route has been studied using the longitudinal field muon spin relaxation technique (LF - μ SR). This study almost completes a survey of muonium in diamond with a range of defect compositions. The result may provide information on the so-called missing fraction (MF) observed in many previous studies of muons implanted into semiconductors. The experimental results showed the existence of a diamagnetic muon state (μ+), two paramagnetic muonium states (tetrahedral interstitial (MuT0) and bond-centred (MuBC0)), and MF formed by positive muons implanted into the sample. The absolute fractions of μ+, MuT0, MuBC0 and MF in the sample were 4%, 54%, 30% and 12%, respectively.

AB - The behaviour of hydrogen in the low strain pure diamond material synthesized by the high pressure high temperature (HPHT) route has been studied using the longitudinal field muon spin relaxation technique (LF - μ SR). This study almost completes a survey of muonium in diamond with a range of defect compositions. The result may provide information on the so-called missing fraction (MF) observed in many previous studies of muons implanted into semiconductors. The experimental results showed the existence of a diamagnetic muon state (μ+), two paramagnetic muonium states (tetrahedral interstitial (MuT0) and bond-centred (MuBC0)), and MF formed by positive muons implanted into the sample. The absolute fractions of μ+, MuT0, MuBC0 and MF in the sample were 4%, 54%, 30% and 12%, respectively.

KW - Diamond properties and applications

KW - HPHT single crystal diamond

KW - Hydrogen

KW - Muon spin relaxation

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ER -

Muon spin relaxation in synthetic type IIa diamond grown by high-pressure and high-temperature (HPHT) synthesis

Abstract

Keywords

ASJC Scopus subject areas

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