@inproceedings{1781d31a712f4704adeeb1650158d5ff,
title = "Modelling Considerations for Coupled Lines in CMOS Back-End-Of-Line at mm-Wave Frequencies",
abstract = "We investigate the effect of passivation contouring, surface roughness, and sidewall tapering on the FEM modelling accuracy of mm-wave couplers in CMOS BEOL. Of three effects, sidewall tapering leads to the most significant improvement (0.37 dB) in predicting peak coupling magnitude at V-band. Ultimately, it is found that none of these measures substantially improve on modelling accuracy.",
keywords = "CMOS technology, Directional couplers, Finite element analysis, Numerical simulation",
author = "Venter, {Johannes J.P.} and Tinus Stander",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications, TELSIKS 2021 ; Conference date: 20-10-2021 Through 22-10-2021",
year = "2021",
doi = "10.1109/TELSIKS52058.2021.9606306",
language = "English",
series = "2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications, TELSIKS 2021 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "99--102",
editor = "Milovanovic, {Bratislav D.} and Doncov, {Nebojsa S.} and Stankovic, {Zoran Z.} and Stosic, {Biljana P.}",
booktitle = "2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications, TELSIKS 2021 - Proceedings",
address = "United States",
}