Abstract
This article provides a comprehensive review of millimeter wave (mmWave) passive bandpass filters (BPF). A detailed discussion is provided on different topologies and architectures, performance comparisons, design challenges and process technologies. Passive BPFs offer the advantages of high operating frequency, good linearity, low noise figure (NF) and no power dissipation. Careful consideration of available process technologies is required for the implementation of high performance mmWave circuits. GaAs and InP (group lll-V) processes provide high cutoff frequencies (fT), good noise performance and high quality on-chip passives. The CMOS process has the prominent advantages of low cost, a high degree of integration and high reliability, while the SiGe BiCMOS process demonstrates high fT, a high level of integration, and better noise and power performance.
Original language | English |
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Pages | 98-108 |
Number of pages | 11 |
Volume | 60 |
No. | 1 |
Specialist publication | Microwave Journal |
Publication status | Published - Jan 2017 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering