Microwave reflection measurement of critical currents in a nanotube Josephson transistor with a resistive environment

Lorenz Lechner; Markus Gaaß; Antti Paila; Mika A. Sillanpää; Christoph Strunk; Pertti J. Hakonen

doi:10.1088/0957-4484/22/12/125203

Microwave reflection measurement of critical currents in a nanotube Josephson transistor with a resistive environment

Lorenz Lechner, Markus Gaaß, Antti Paila, Mika A. Sillanpää, Christoph Strunk, Pertti J. Hakonen

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A scheme for measuring small intrinsic critical currents I_c in nanoscale devices is described. Changes in Josephson inductance L_J are converted to frequency variations that are recorded via microwave reflection measurements at 700-800 MHz. The critical current is determined from the frequency shift of the reflection magnitude at zero phase bias assuming a sinusoidal current-phase relation. The method is used to study a multiwalled carbon nanotube transistor with Pd/Nb contacts inside a resistive on-chip environment. We observe gate-tunable critical currents up to I_c ∼ 8 nA corresponding to L_J > 40 nH. The method presented is also applicable to devices shunted by closed superconducting loops.

Original language	English
Article number	125203
Journal	Nanotechnology
Volume	22
Issue number	12
DOIs	https://doi.org/10.1088/0957-4484/22/12/125203
Publication status	Published - 25 Mar 2011
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Microwave reflection measurement of critical currents in a nanotube Josephson transistor with a resistive environment",

abstract = "A scheme for measuring small intrinsic critical currents Ic in nanoscale devices is described. Changes in Josephson inductance LJ are converted to frequency variations that are recorded via microwave reflection measurements at 700-800 MHz. The critical current is determined from the frequency shift of the reflection magnitude at zero phase bias assuming a sinusoidal current-phase relation. The method is used to study a multiwalled carbon nanotube transistor with Pd/Nb contacts inside a resistive on-chip environment. We observe gate-tunable critical currents up to Ic ∼ 8 nA corresponding to LJ > 40 nH. The method presented is also applicable to devices shunted by closed superconducting loops.",

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AU - Lechner, Lorenz

AU - Gaaß, Markus

AU - Paila, Antti

AU - Sillanpää, Mika A.

AU - Strunk, Christoph

AU - Hakonen, Pertti J.

PY - 2011/3/25

Y1 - 2011/3/25

N2 - A scheme for measuring small intrinsic critical currents Ic in nanoscale devices is described. Changes in Josephson inductance LJ are converted to frequency variations that are recorded via microwave reflection measurements at 700-800 MHz. The critical current is determined from the frequency shift of the reflection magnitude at zero phase bias assuming a sinusoidal current-phase relation. The method is used to study a multiwalled carbon nanotube transistor with Pd/Nb contacts inside a resistive on-chip environment. We observe gate-tunable critical currents up to Ic ∼ 8 nA corresponding to LJ > 40 nH. The method presented is also applicable to devices shunted by closed superconducting loops.

AB - A scheme for measuring small intrinsic critical currents Ic in nanoscale devices is described. Changes in Josephson inductance LJ are converted to frequency variations that are recorded via microwave reflection measurements at 700-800 MHz. The critical current is determined from the frequency shift of the reflection magnitude at zero phase bias assuming a sinusoidal current-phase relation. The method is used to study a multiwalled carbon nanotube transistor with Pd/Nb contacts inside a resistive on-chip environment. We observe gate-tunable critical currents up to Ic ∼ 8 nA corresponding to LJ > 40 nH. The method presented is also applicable to devices shunted by closed superconducting loops.

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JO - Nanotechnology

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Microwave reflection measurement of critical currents in a nanotube Josephson transistor with a resistive environment

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