Microstructure and scratch analysis of aluminium thin films sputtered at varying RF power on stainless steel substrates

F. M. Mwema; E. T. Akinlabi; O. P. Oladijo; S. Krishna

doi:10.1080/23311916.2020.1765687

Microstructure and scratch analysis of aluminium thin films sputtered at varying RF power on stainless steel substrates

F. M. Mwema, E. T. Akinlabi, O. P. Oladijo, S. Krishna

Mechanical Engineering Science

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Aluminium (Al) thin films (thickness ranging between 500 and 600 nm) were deposited on stainless-steel substrates at varying radio-frequency (RF) power by magnetron sputtering at a constant substrate temperature of 90^°C. Characterisations were undertaken by field emission scanning electron microscopy (FESEM), optical surface profilometry (OSP), atomic force microscopy (AFM), X-ray diffraction (XRD), selected Fourier-transform infrared spectroscopy (FTIR), nanoindentation, and micro-scratch tests. At high RF powers (300–350 W), there was the formation of less porous, dense, and continuous Al thin films with better resistance to scratch failure. The high roughness on films deposited at 200 and 250 W was due to high porosity and oxides observed on the FESEM micrographs.

Original language	English
Article number	1765687
Journal	Cogent Engineering
Volume	7
Issue number	1
DOIs	https://doi.org/10.1080/23311916.2020.1765687
Publication status	Published - 1 Jan 2020

Keywords

aluminium
micro-scratch test
oxidation
power
roughness
sputtering
thin films

ASJC Scopus subject areas

General Computer Science
General Chemical Engineering
General Engineering

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10.1080/23311916.2020.1765687

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title = "Microstructure and scratch analysis of aluminium thin films sputtered at varying RF power on stainless steel substrates",

abstract = "Aluminium (Al) thin films (thickness ranging between 500 and 600 nm) were deposited on stainless-steel substrates at varying radio-frequency (RF) power by magnetron sputtering at a constant substrate temperature of 90°C. Characterisations were undertaken by field emission scanning electron microscopy (FESEM), optical surface profilometry (OSP), atomic force microscopy (AFM), X-ray diffraction (XRD), selected Fourier-transform infrared spectroscopy (FTIR), nanoindentation, and micro-scratch tests. At high RF powers (300–350 W), there was the formation of less porous, dense, and continuous Al thin films with better resistance to scratch failure. The high roughness on films deposited at 200 and 250 W was due to high porosity and oxides observed on the FESEM micrographs.",

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AU - Mwema, F. M.

AU - Akinlabi, E. T.

AU - Oladijo, O. P.

AU - Krishna, S.

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Aluminium (Al) thin films (thickness ranging between 500 and 600 nm) were deposited on stainless-steel substrates at varying radio-frequency (RF) power by magnetron sputtering at a constant substrate temperature of 90°C. Characterisations were undertaken by field emission scanning electron microscopy (FESEM), optical surface profilometry (OSP), atomic force microscopy (AFM), X-ray diffraction (XRD), selected Fourier-transform infrared spectroscopy (FTIR), nanoindentation, and micro-scratch tests. At high RF powers (300–350 W), there was the formation of less porous, dense, and continuous Al thin films with better resistance to scratch failure. The high roughness on films deposited at 200 and 250 W was due to high porosity and oxides observed on the FESEM micrographs.

AB - Aluminium (Al) thin films (thickness ranging between 500 and 600 nm) were deposited on stainless-steel substrates at varying radio-frequency (RF) power by magnetron sputtering at a constant substrate temperature of 90°C. Characterisations were undertaken by field emission scanning electron microscopy (FESEM), optical surface profilometry (OSP), atomic force microscopy (AFM), X-ray diffraction (XRD), selected Fourier-transform infrared spectroscopy (FTIR), nanoindentation, and micro-scratch tests. At high RF powers (300–350 W), there was the formation of less porous, dense, and continuous Al thin films with better resistance to scratch failure. The high roughness on films deposited at 200 and 250 W was due to high porosity and oxides observed on the FESEM micrographs.

KW - aluminium

KW - micro-scratch test

KW - oxidation

KW - power

KW - roughness

KW - sputtering

KW - thin films

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DO - 10.1080/23311916.2020.1765687

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Microstructure and scratch analysis of aluminium thin films sputtered at varying RF power on stainless steel substrates

Abstract

Keywords

ASJC Scopus subject areas

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