TY - GEN
T1 - Mechanism controlling thermal conductivity and coefficient of copper metal matrix composites
AU - Esezobor, David
AU - Fatoba, Samuel
PY - 2009
Y1 - 2009
N2 - The potential demands for reliable materials in electronic industries are ever increasing. The main pronounced failure that occurs during microelectronic circuits application involves thermal fatigue. This occurs due to the different thermal expansion coefficient of semi conductor chip and packaging material. Thus, the search for appropriate coefficient of thermal expansion (CTE) of packaging materials in combination with a high thermal conductivity is inevitable in the design and selections of it sink material. An attempt as been made in this research work to produce copper matrix composites using silicon carbide (SiC) as reinforcement. This is aimed at getting a material with high thermal conductivity using non convectional liquid metallurgy. Copper silicon carbide composites were produced in 80%Cu - 20%SiC, 70%Cu - 30%SiC, 60% Cu - 40% SiC, 50% Cu - 50%SiC, 40%Cu - 60%SiC ratios with an average grain size of 212μm, 425μm and 710μm respectively via liquid metallurgy route. The result revealed that increasing volume fraction and increasing particle size of the particulate had significant effect on the thermo-physical properties. This phenomenon is explained using the evolving microstructures.
AB - The potential demands for reliable materials in electronic industries are ever increasing. The main pronounced failure that occurs during microelectronic circuits application involves thermal fatigue. This occurs due to the different thermal expansion coefficient of semi conductor chip and packaging material. Thus, the search for appropriate coefficient of thermal expansion (CTE) of packaging materials in combination with a high thermal conductivity is inevitable in the design and selections of it sink material. An attempt as been made in this research work to produce copper matrix composites using silicon carbide (SiC) as reinforcement. This is aimed at getting a material with high thermal conductivity using non convectional liquid metallurgy. Copper silicon carbide composites were produced in 80%Cu - 20%SiC, 70%Cu - 30%SiC, 60% Cu - 40% SiC, 50% Cu - 50%SiC, 40%Cu - 60%SiC ratios with an average grain size of 212μm, 425μm and 710μm respectively via liquid metallurgy route. The result revealed that increasing volume fraction and increasing particle size of the particulate had significant effect on the thermo-physical properties. This phenomenon is explained using the evolving microstructures.
KW - Copper silicon composite
KW - Electronic
KW - Thermo-physical property
UR - http://www.scopus.com/inward/record.url?scp=78049434119&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:78049434119
SN - 9781615676361
T3 - Materials Science and Technology Conference and Exhibition 2009, MS and T'09
SP - 1795
EP - 1805
BT - Materials Science and Technology Conference and Exhibition 2009, MS and T'09
T2 - Materials Science and Technology Conference and Exhibition 2009, MS and T'09
Y2 - 25 October 2009 through 29 October 2009
ER -