Magnetic, thermodynamic, NMR, and transport properties of the heavy-fermion semiconductor (formula presented)

V. H. Tran; S. Paschen; A. Rabis; N. Senthilkumaran; M. Baenitz; F. Steglich; P. de; A. M. Strydom

doi:10.1103/PhysRevB.67.075111

Magnetic, thermodynamic, NMR, and transport properties of the heavy-fermion semiconductor (formula presented)

V. H. Tran
, S. Paschen
, A. Rabis
, N. Senthilkumaran
, M. Baenitz
, F. Steglich
, P. de
, A. M. Strydom

Physics

Max Planck Institute for Chemical Physics of Solids
University of the Witwatersrand

Research output: Contribution to journal › Article › peer-review

Abstract

We have measured the magnetic susceptibility, specific heat, NMR, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power, and thermal conductivity of polycrystalline (formula presented) Some of these properties are compared to those of (formula presented) The experimental data indicate the formation of a narrow energy gap of approximately (formula presented) in (formula presented) Similarities to the behavior of heavy-fermion semiconductors (Kondo insulators) are observed, in particular to CeNiSn. Thus, we believe that (formula presented) may be classified as a heavy-fermion semiconductor.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.67.075111
Publication status	Published - 28 Feb 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.67.075111

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title = "Magnetic, thermodynamic, NMR, and transport properties of the heavy-fermion semiconductor (formula presented)",

abstract = "We have measured the magnetic susceptibility, specific heat, NMR, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power, and thermal conductivity of polycrystalline (formula presented) Some of these properties are compared to those of (formula presented) The experimental data indicate the formation of a narrow energy gap of approximately (formula presented) in (formula presented) Similarities to the behavior of heavy-fermion semiconductors (Kondo insulators) are observed, in particular to CeNiSn. Thus, we believe that (formula presented) may be classified as a heavy-fermion semiconductor.",

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year = "2003",

month = feb,

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doi = "10.1103/PhysRevB.67.075111",

language = "English",

volume = "67",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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T1 - Magnetic, thermodynamic, NMR, and transport properties of the heavy-fermion semiconductor (formula presented)

AU - Tran, V. H.

AU - Paschen, S.

AU - Rabis, A.

AU - Senthilkumaran, N.

AU - Baenitz, M.

AU - Steglich, F.

AU - de, P.

AU - Strydom, A. M.

PY - 2003/2/28

Y1 - 2003/2/28

N2 - We have measured the magnetic susceptibility, specific heat, NMR, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power, and thermal conductivity of polycrystalline (formula presented) Some of these properties are compared to those of (formula presented) The experimental data indicate the formation of a narrow energy gap of approximately (formula presented) in (formula presented) Similarities to the behavior of heavy-fermion semiconductors (Kondo insulators) are observed, in particular to CeNiSn. Thus, we believe that (formula presented) may be classified as a heavy-fermion semiconductor.

AB - We have measured the magnetic susceptibility, specific heat, NMR, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power, and thermal conductivity of polycrystalline (formula presented) Some of these properties are compared to those of (formula presented) The experimental data indicate the formation of a narrow energy gap of approximately (formula presented) in (formula presented) Similarities to the behavior of heavy-fermion semiconductors (Kondo insulators) are observed, in particular to CeNiSn. Thus, we believe that (formula presented) may be classified as a heavy-fermion semiconductor.

UR - https://www.scopus.com/pages/publications/85038946810

U2 - 10.1103/PhysRevB.67.075111

DO - 10.1103/PhysRevB.67.075111

M3 - Article

AN - SCOPUS:85038946810

SN - 1098-0121

VL - 67

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

ER -

Magnetic, thermodynamic, NMR, and transport properties of the heavy-fermion semiconductor (formula presented)

Abstract

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