Low-temperature muon spin relaxation measurements on CeRu4 Sn6

A. M. Strydom; A. D. Hillier; D. T. Adroja; S. Paschen; F. Steglich

doi:10.1016/j.jmmm.2006.10.084

Low-temperature muon spin relaxation measurements on CeRu₄ Sn₆

A. M. Strydom, A. D. Hillier, D. T. Adroja, S. Paschen, F. Steglich

Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report on the results of muon spin relaxation (μ SR) measurements on the low-carrier-density, strongly correlated compound CeRu₄ Sn₆. Our results dismiss the possibility of magnetic ordering in CeRu₄ Sn₆, either in the form of spin-glass or long-range ordering for temperatures down to 50 mK. The muon depolarization rate is both temperature- and field-dependent at low temperatures (T < 1 K), consistent with the physical properties of CeRu₄ Sn₆, indicating that it is a paramagnetic material with low-temperature quantum fluctuations.

Original language	English
Pages (from-to)	377-379
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 1
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.084
Publication status	Published - Mar 2007

Keywords

CeRu Sn
Low-carrier-density systems
Muon spin relaxation
Strongly correlated electrons

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2006.10.084

Cite this

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title = "Low-temperature muon spin relaxation measurements on CeRu4 Sn6",

abstract = "We report on the results of muon spin relaxation (μ SR) measurements on the low-carrier-density, strongly correlated compound CeRu4 Sn6. Our results dismiss the possibility of magnetic ordering in CeRu4 Sn6, either in the form of spin-glass or long-range ordering for temperatures down to 50 mK. The muon depolarization rate is both temperature- and field-dependent at low temperatures (T < 1 K), consistent with the physical properties of CeRu4 Sn6, indicating that it is a paramagnetic material with low-temperature quantum fluctuations.",

keywords = "CeRu Sn, Low-carrier-density systems, Muon spin relaxation, Strongly correlated electrons",

author = "Strydom, \{A. M.\} and Hillier, \{A. D.\} and Adroja, \{D. T.\} and S. Paschen and F. Steglich",

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language = "English",

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journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

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T1 - Low-temperature muon spin relaxation measurements on CeRu4 Sn6

AU - Strydom, A. M.

AU - Hillier, A. D.

AU - Adroja, D. T.

AU - Paschen, S.

AU - Steglich, F.

PY - 2007/3

Y1 - 2007/3

N2 - We report on the results of muon spin relaxation (μ SR) measurements on the low-carrier-density, strongly correlated compound CeRu4 Sn6. Our results dismiss the possibility of magnetic ordering in CeRu4 Sn6, either in the form of spin-glass or long-range ordering for temperatures down to 50 mK. The muon depolarization rate is both temperature- and field-dependent at low temperatures (T < 1 K), consistent with the physical properties of CeRu4 Sn6, indicating that it is a paramagnetic material with low-temperature quantum fluctuations.

AB - We report on the results of muon spin relaxation (μ SR) measurements on the low-carrier-density, strongly correlated compound CeRu4 Sn6. Our results dismiss the possibility of magnetic ordering in CeRu4 Sn6, either in the form of spin-glass or long-range ordering for temperatures down to 50 mK. The muon depolarization rate is both temperature- and field-dependent at low temperatures (T < 1 K), consistent with the physical properties of CeRu4 Sn6, indicating that it is a paramagnetic material with low-temperature quantum fluctuations.

KW - CeRu Sn

KW - Low-carrier-density systems

KW - Muon spin relaxation

KW - Strongly correlated electrons

UR - https://www.scopus.com/pages/publications/33847251635

U2 - 10.1016/j.jmmm.2006.10.084

DO - 10.1016/j.jmmm.2006.10.084

M3 - Article

AN - SCOPUS:33847251635

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VL - 310

SP - 377

EP - 379

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 1

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