Abstract
This article presents an adaptive predistortion (APD) linearization technique to improve the linearity of millimeter-wave power amplifiers (PAs), specifically at 60 GHz. The PA and the APD were designed using the 0.13 μm SiGe BiCMOS process. The predistortion is applied to the PA by varying the gain of the PA through its variable gain amplifier. The PA achieves a PSAT of 11.97 dBm and IP1 dB of -10 dBm. After linearization the PA has an improved IP1 dB of -6 dBm. This linearization technique results in an optimum intermodulation distortion 3rd reduction of 10 dB. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:743-748, 2014
Original language | English |
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Pages (from-to) | 743-748 |
Number of pages | 6 |
Journal | Microwave and Optical Technology Letters |
Volume | 56 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2014 |
Externally published | Yes |
Keywords
- 60 GHz
- SiGe HBT power amplifier
- intermodulation distortion 3rd component
- linearization
- predistortion
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering