Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits

Kaikai Xu; Kingsley A. Ogudo; Jean Luc Polleux; Carlos Viana; Zhengfei Ma; Zebin Li; Qi Yu; Guannpyng Li; Lukas W. Snyman

doi:10.1080/15502724.2015.1134333

Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits

Kaikai Xu, Kingsley A. Ogudo, Jean Luc Polleux, Carlos Viana, Zhengfei Ma, Zebin Li, Qi Yu, Guannpyng Li, Lukas W. Snyman

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

ABSTRACT: In this article, we discuss the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon light emitting devices (Si-LEDs) could be designed and realized utilizing the standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from the three-terminal MOS-like structure is observed, with the approach of carrier energy and momentum engineering design. Because Si-LEDs, waveguides, and photodetectors (Si) can be integrated on a single chip, a small microphotonic system could be realized in the CMOS integrated circuitry standard platform. The results can be substantially utilized for realizing a complete on-chip optical link.

Original language	English
Pages (from-to)	203-212
Number of pages	10
Journal	LEUKOS - Journal of Illuminating Engineering Society of North America
Volume	12
Issue number	4
DOIs	https://doi.org/10.1080/15502724.2015.1134333
Publication status	Published - 1 Oct 2016
Externally published	Yes

Keywords

CMOS integrated circuit technology
Si light emitting devices
silicon photonics

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1080/15502724.2015.1134333

Cite this

@article{10c05c04807a466ba4ecc479caf8c0b6,

title = "Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits",

abstract = "ABSTRACT: In this article, we discuss the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon light emitting devices (Si-LEDs) could be designed and realized utilizing the standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from the three-terminal MOS-like structure is observed, with the approach of carrier energy and momentum engineering design. Because Si-LEDs, waveguides, and photodetectors (Si) can be integrated on a single chip, a small microphotonic system could be realized in the CMOS integrated circuitry standard platform. The results can be substantially utilized for realizing a complete on-chip optical link.",

keywords = "CMOS integrated circuit technology, Si light emitting devices, silicon photonics",

author = "Kaikai Xu and Ogudo, {Kingsley A.} and Polleux, {Jean Luc} and Carlos Viana and Zhengfei Ma and Zebin Li and Qi Yu and Guannpyng Li and Snyman, {Lukas W.}",

note = "Publisher Copyright: Copyright {\textcopyright} Illuminating Engineering Society.",

year = "2016",

month = oct,

day = "1",

doi = "10.1080/15502724.2015.1134333",

language = "English",

volume = "12",

pages = "203--212",

journal = "LEUKOS - Journal of Illuminating Engineering Society of North America",

issn = "1550-2724",

publisher = "Taylor and Francis Ltd.",

number = "4",

}

TY - JOUR

T1 - Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits

AU - Xu, Kaikai

AU - Ogudo, Kingsley A.

AU - Polleux, Jean Luc

AU - Viana, Carlos

AU - Ma, Zhengfei

AU - Li, Zebin

AU - Yu, Qi

AU - Li, Guannpyng

AU - Snyman, Lukas W.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - ABSTRACT: In this article, we discuss the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon light emitting devices (Si-LEDs) could be designed and realized utilizing the standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from the three-terminal MOS-like structure is observed, with the approach of carrier energy and momentum engineering design. Because Si-LEDs, waveguides, and photodetectors (Si) can be integrated on a single chip, a small microphotonic system could be realized in the CMOS integrated circuitry standard platform. The results can be substantially utilized for realizing a complete on-chip optical link.

AB - ABSTRACT: In this article, we discuss the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon light emitting devices (Si-LEDs) could be designed and realized utilizing the standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from the three-terminal MOS-like structure is observed, with the approach of carrier energy and momentum engineering design. Because Si-LEDs, waveguides, and photodetectors (Si) can be integrated on a single chip, a small microphotonic system could be realized in the CMOS integrated circuitry standard platform. The results can be substantially utilized for realizing a complete on-chip optical link.

KW - CMOS integrated circuit technology

KW - Si light emitting devices

KW - silicon photonics

UR - http://www.scopus.com/inward/record.url?scp=84979255864&partnerID=8YFLogxK

U2 - 10.1080/15502724.2015.1134333

DO - 10.1080/15502724.2015.1134333

M3 - Article

AN - SCOPUS:84979255864

SN - 1550-2724

VL - 12

SP - 203

EP - 212

JO - LEUKOS - Journal of Illuminating Engineering Society of North America

JF - LEUKOS - Journal of Illuminating Engineering Society of North America

IS - 4

ER -

Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits

Abstract

Keywords

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