Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits

Kaikai Xu, Kingsley A. Ogudo, Jean Luc Polleux, Carlos Viana, Zhengfei Ma, Zebin Li, Qi Yu, Guannpyng Li, Lukas W. Snyman

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


ABSTRACT: In this article, we discuss the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon light emitting devices (Si-LEDs) could be designed and realized utilizing the standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from the three-terminal MOS-like structure is observed, with the approach of carrier energy and momentum engineering design. Because Si-LEDs, waveguides, and photodetectors (Si) can be integrated on a single chip, a small microphotonic system could be realized in the CMOS integrated circuitry standard platform. The results can be substantially utilized for realizing a complete on-chip optical link.

Original languageEnglish
Pages (from-to)203-212
Number of pages10
JournalLEUKOS - Journal of Illuminating Engineering Society of North America
Issue number4
Publication statusPublished - 1 Oct 2016
Externally publishedYes


  • CMOS integrated circuit technology
  • Si light emitting devices
  • silicon photonics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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