Light emission from Si avalanche mode LEDs as a function of e field control, impurity scattering, and carrier density balancing

Zhaotong Zhang; Kingsley A. Ogudo; Hongliang Sun; Lukas W. Snyman; Kaikai Xu

doi:10.1117/12.2502224

Light emission from Si avalanche mode LEDs as a function of e field control, impurity scattering, and carrier density balancing

Zhaotong Zhang, Kingsley A. Ogudo, Hongliang Sun, Lukas W. Snyman, Kaikai Xu

Electrical and Electronic Engineering Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Light emission in silicon LEDs that operate in the avalanche mode of operation, was analyzed by appropriate modelling, including the silicon energy band structure, available carrier energy spread, and available carrier momentum spread. These mechanisms play key roles in the realization of light emitting, using standard silicon processing procedures. The analyses indicate that appropriate doping and controlling the energized specifically electrons, carrier energy and carrier density by field manipulation, and controlling carrier momentum through appropriate impurity scattering technology, show great potential to enhance these emissions. Particularly, development work conducted on the p+np+ mono-silicon LED and the N+PN+PN+ Poly silicon LED show that field control, impurity and defect scattering and balancing the carrier type and carrier density has a profound influence on the optical emission intensity in Si AMLEDs. Furthermore, a much clearer understanding of the mechanisms responsible for optical emissions in Si Av LEDs has been obtained and can proceed with further improved device designs and applications.

Original language	English
Title of host publication	Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Editors	Monuko du Plessis
Publisher	SPIE
ISBN (Electronic)	9781510627529
DOIs	https://doi.org/10.1117/12.2502224
Publication status	Published - 2019
Event	5th South African Conference on Sensors, MEMS and Electro-Optical Systems, SMEOS 2018 - Skukuza, South Africa Duration: 8 Oct 2018 → 10 Oct 2018

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11043
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	5th South African Conference on Sensors, MEMS and Electro-Optical Systems, SMEOS 2018
Country/Territory	South Africa
City	Skukuza
Period	8/10/18 → 10/10/18

Keywords

CMOS integrated circuit technology
light emitting devices
optical interconnects
sensors
Silicon photonics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2502224

Cite this

Zhang, Z., Ogudo, K. A., Sun, H., Snyman, L. W., & Xu, K. (2019). Light emission from Si avalanche mode LEDs as a function of e field control, impurity scattering, and carrier density balancing. In M. du Plessis (Ed.), Fifth Conference on Sensors, MEMS, and Electro-Optic Systems Article 1104307 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11043). SPIE. https://doi.org/10.1117/12.2502224

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title = "Light emission from Si avalanche mode LEDs as a function of e field control, impurity scattering, and carrier density balancing",

abstract = "Light emission in silicon LEDs that operate in the avalanche mode of operation, was analyzed by appropriate modelling, including the silicon energy band structure, available carrier energy spread, and available carrier momentum spread. These mechanisms play key roles in the realization of light emitting, using standard silicon processing procedures. The analyses indicate that appropriate doping and controlling the energized specifically electrons, carrier energy and carrier density by field manipulation, and controlling carrier momentum through appropriate impurity scattering technology, show great potential to enhance these emissions. Particularly, development work conducted on the p+np+ mono-silicon LED and the N+PN+PN+ Poly silicon LED show that field control, impurity and defect scattering and balancing the carrier type and carrier density has a profound influence on the optical emission intensity in Si AMLEDs. Furthermore, a much clearer understanding of the mechanisms responsible for optical emissions in Si Av LEDs has been obtained and can proceed with further improved device designs and applications.",

keywords = "CMOS integrated circuit technology, light emitting devices, optical interconnects, sensors, Silicon photonics",

author = "Zhaotong Zhang and Ogudo, {Kingsley A.} and Hongliang Sun and Snyman, {Lukas W.} and Kaikai Xu",

note = "Publisher Copyright: {\textcopyright} 2019 SPIE.; 5th South African Conference on Sensors, MEMS and Electro-Optical Systems, SMEOS 2018 ; Conference date: 08-10-2018 Through 10-10-2018",

year = "2019",

doi = "10.1117/12.2502224",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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}

Zhang, Z, Ogudo, KA, Sun, H, Snyman, LW & Xu, K 2019, Light emission from Si avalanche mode LEDs as a function of e field control, impurity scattering, and carrier density balancing. in M du Plessis (ed.), Fifth Conference on Sensors, MEMS, and Electro-Optic Systems., 1104307, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11043, SPIE, 5th South African Conference on Sensors, MEMS and Electro-Optical Systems, SMEOS 2018, Skukuza, South Africa, 8/10/18. https://doi.org/10.1117/12.2502224

Light emission from Si avalanche mode LEDs as a function of e field control, impurity scattering, and carrier density balancing. / Zhang, Zhaotong; Ogudo, Kingsley A.; Sun, Hongliang et al.
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems. ed. / Monuko du Plessis. SPIE, 2019. 1104307 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11043).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Zhang, Zhaotong

AU - Ogudo, Kingsley A.

AU - Sun, Hongliang

AU - Snyman, Lukas W.

AU - Xu, Kaikai

PY - 2019

Y1 - 2019

N2 - Light emission in silicon LEDs that operate in the avalanche mode of operation, was analyzed by appropriate modelling, including the silicon energy band structure, available carrier energy spread, and available carrier momentum spread. These mechanisms play key roles in the realization of light emitting, using standard silicon processing procedures. The analyses indicate that appropriate doping and controlling the energized specifically electrons, carrier energy and carrier density by field manipulation, and controlling carrier momentum through appropriate impurity scattering technology, show great potential to enhance these emissions. Particularly, development work conducted on the p+np+ mono-silicon LED and the N+PN+PN+ Poly silicon LED show that field control, impurity and defect scattering and balancing the carrier type and carrier density has a profound influence on the optical emission intensity in Si AMLEDs. Furthermore, a much clearer understanding of the mechanisms responsible for optical emissions in Si Av LEDs has been obtained and can proceed with further improved device designs and applications.

AB - Light emission in silicon LEDs that operate in the avalanche mode of operation, was analyzed by appropriate modelling, including the silicon energy band structure, available carrier energy spread, and available carrier momentum spread. These mechanisms play key roles in the realization of light emitting, using standard silicon processing procedures. The analyses indicate that appropriate doping and controlling the energized specifically electrons, carrier energy and carrier density by field manipulation, and controlling carrier momentum through appropriate impurity scattering technology, show great potential to enhance these emissions. Particularly, development work conducted on the p+np+ mono-silicon LED and the N+PN+PN+ Poly silicon LED show that field control, impurity and defect scattering and balancing the carrier type and carrier density has a profound influence on the optical emission intensity in Si AMLEDs. Furthermore, a much clearer understanding of the mechanisms responsible for optical emissions in Si Av LEDs has been obtained and can proceed with further improved device designs and applications.

KW - CMOS integrated circuit technology

KW - light emitting devices

KW - optical interconnects

KW - sensors

KW - Silicon photonics

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Fifth Conference on Sensors, MEMS, and Electro-Optic Systems

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Zhang Z, Ogudo KA, Sun H, Snyman LW, Xu K. Light emission from Si avalanche mode LEDs as a function of e field control, impurity scattering, and carrier density balancing. In du Plessis M, editor, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems. SPIE. 2019. 1104307. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2502224

Light emission from Si avalanche mode LEDs as a function of e field control, impurity scattering, and carrier density balancing

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